MKE11R600DCGFC IXYS, MKE11R600DCGFC Datasheet

MOSFET & Power Driver ICs CoolMOS Power Mosfet 600V 15A

MKE11R600DCGFC

Manufacturer Part Number
MKE11R600DCGFC
Description
MOSFET & Power Driver ICs CoolMOS Power Mosfet 600V 15A
Manufacturer
IXYS
Datasheet

Specifications of MKE11R600DCGFC

Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.165
Ciss, Typ, (pf)
2000
Qg, Typ, (nc)
40
Trr, Max, (ns)
-
Trr, Typ, (ns)
390
Pd, (w)
-
Rthjc, Max, (k/w)
1.10
Visol, Rms, (v)
2500
Package Style
I4-PAC
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
CoolMOS
with
Boost topology
Electrically isolated back surface
2500 V electrical isolation
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
MOSFET T
Symbol
V
V
I
I
E
E
dV/dt
Symbol
R
V
I
I
C
C
Q
Q
Q
t
t
t
t
E
E
E
R
R
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
on
off
rec off
DSS
AS
AR
DSon
iss
oss
thJC
thJH
g
gs
gd
SiC Diode
Conditions
T
T
T
single pulse
repetitive
MOSFET dV/dt ruggedness V
Conditions
V
V
V
V
V
f = 1 MHz
V
Inductive switching
V
I
no reverse recovery current due to absence of minority carrier injection
with heat transfer paste (IXYS test setup)
D
VJ
C
C
GS
DS
DS
GS
GS
GS
GS
= 12 A; R
= 25°C
= 90°C
= 25°C
= 600 V; V
= 10 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 to 10 V; V
= 0/10 V; V
™ 1)
GS
; I
D
DS
G
D
= 0.79 mA
= 10 W
= 12 A
= 100 V
GS
Power MOSFET
DS
DS
I
D
= 0 V
= 0 V
DS
= 380 V
= 7.9 A; T
= 400 V; I
T
T
T
C
VJ
VJ
VJ
= 25°C
D
DS
(T
= 25°C
= 125°C
= 125°C
= 12 A
= 0...480 V
VJ
= 25°C, unless otherwise specified)
min.
2.5
Characteristic Values
2000
Maximum Ratings
0.09
0.01
1.35
150
100
typ.
10
40
13
12
75
3
9
6
4
3
4
1
2
max.
± 20
0.79
SiC
600
522
165
100
3.5
1.1
52
15
11
50
1
V/ns
K/W
K/W
mW
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
µA
µA
nA
D
pF
pF
T
ns
ns
ns
ns
V
V
A
A
V
MKE 11R600DCGFC
I
V
R
ISOPLUS i4
E72873
Features
• Silicon chip on Direct-Copper-Bond
• Fast CoolMOS
• Enhanced total power density
• SiC Boost Diode
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
Advantages
• Easy assembly:
• Space savings
• High power density
• High reliability
D25
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
- low thermal resistance
- no reverse recovery current
no screws or isolation foils required
DSS
DS(on) max
inductive switching (UIS)
due to reduced chip thickness
1)
1
CoolMOS
Infineon Technologies AG.
5
=
=
= 0.165 Ω
™ 1)
is a trademark of
power MOSFET 4
600 V
15 A
isolated back
20100920a
surface
1 - 6

th

Related parts for MKE11R600DCGFC

MKE11R600DCGFC Summary of contents

Page 1

... E no reverse recovery current due to absence of minority carrier injection rec off R thJC R with heat transfer paste (IXYS test setup) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 3 SiC Maximum Ratings 600 ± ...

Page 2

... pin - backside metal S A Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. 0.9 390 = 400 V 7 ...

Page 3

... ISOPLUS i4 Outline 200 120 100 150 80 100 120 120 T [°C] T [° Fig. 1 Power dissipation IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 25° 5 4 160 160 [V] DS Fig. 2 Typ. output characteristics MKE 11R600DCGFC MILLIMETER DIM ...

Page 4

... SD Fig. 7 Forward characteristic of reverse diode 600 500 400 300 200 100 100 140 T [°C] j Fig. 10 Avalanche energy IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0 0.4 0.3 98% 0.2 typ 0 -60 - 100 T [° ...

Page 5

... 0 125° 0.2 [mJ [Ω] G Fig. 16 Typ. turn-on energy and switching times versus gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved [ Fig. 13 Drain current I 25 0.10 20 0.08 15 0.06 ...

Page 6

... d(on) r Fig. 20 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 4.5 4.0 3.5 3.0 Z 2.5 thJH 2.0 [K/W] 1.5 1.0 0.5 0.0 1000 10000 1 Fig ...

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