ZXMP3F37DN8TA Diodes Inc, ZXMP3F37DN8TA Datasheet

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ZXMP3F37DN8TA

Manufacturer Part Number
ZXMP3F37DN8TA
Description
MOSFET & Power Driver ICs 30V Dual P-Channel 20V VGS -36A IDM
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMP3F37DN8TA

Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMP3F37DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
ZXMP3F37DN8TA
Quantity:
18 000
ZXMP3F37DN8
30V SO8 Dual P-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex has been
designed to minimize the on-state resistance (R
and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Features
Applications
Ordering information
Device marking
ZXMP 3F37D
Issue 1 - August 2008
© Diodes Incorporated 2008
Device
ZXMP3F37DN8TA
V
(BR)DSS
Low on-resistance
Fast switching speed
Low gate drive
Dual SO8 package
DC-DC Converters
Power management functions
Disconnect switches
Motor control
-30
(V)
0.041
0.025
R
DS(on)
@
@
Reel size
(inches)
V
V
GS
GS
7
(Ω)
=-4.5V
=-10V
Tape width
(mm)
12
I
-8.3
D
(A)
DS(on)
1
)
Quantity
per reel
500
www.diodes.com
www.zetex.com

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ZXMP3F37DN8TA Summary of contents

Page 1

... Dual SO8 package Applications • DC-DC Converters Power management functions • • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMP3F37DN8TA 7 Device marking ZXMP 3F37D Issue 1 - August 2008 © Diodes Incorporated 2008 I (A) D -8.3 ) DS(on) Tape width Quantity ...

Page 2

... Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a dual device with 2 active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - August 2008 © Diodes Incorporated 2008 (b)(d) = -10V; T =25° (b)(d) = -10V ...

Page 3

... One active die D=0 D=0 100µ 1m 10m 100m Pulse Width (s) Transient Thermal Impedance Issue 1 - August 2008 © Diodes Incorporated 2008 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 One active die 1ms 0.4 100µs 0.2 0 100 10 Single Pulse D=0 ...

Page 4

... Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - August 2008 © Diodes Incorporated 2008 = 25°C unless otherwise stated) Q1 and Q2 amb Min. ...

Page 5

... V = 10V 150° Gate-Source Voltage (V) GS Typical Transfer Characteristics 10 2.5V 1 0.1 0.01 0 Drain Current (A) D On-Resistance v Drain Current Issue 1 - August 2008 © Diodes Incorporated 2008 3. 2. 1.6 1.4 1.2 1 25°C 0.8 0.6 0.4 3 -50 Normalised Curves v Temperature 25°C ...

Page 6

... Typical characteristics 2500 2000 C 1500 ISS 1000 500 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test circuits Issue 1 - August 2008 © Diodes Incorporated 2008 1MHz OSS 4 C RSS Gate-Source Voltage v Gate Charge 6 ZXMP3F37DN8 15V Charge (nC) www.zetex.com www.diodes.com 35 ...

Page 7

... A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - August 2008 © Diodes Incorporated 2008 Millimeters DIM Min. Max. 1.35 1.75 e 0.10 0.25 b 4.80 5.00 c 5.80 6.20 U 3.80 4 ...

Page 8

... Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. ...

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