ZXMP3F30FHTA Diodes Inc, ZXMP3F30FHTA Datasheet - Page 4

• Manufacturer Part Number: ZXMP3F30FHTA
• Description: MOSFET & Power Driver ICs 30V P-Channel MOSFET 20V VGS -15.3A IDM
• Manufacturer: Diodes Inc

Specifications of ZXMP3F30FHTA

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical characteristics (at T
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - August 2008
© Diodes Incorporated
Parameter
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
Transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(†)
(‡) (†)
(
(
*
*
)
) (†)
(
*
(‡)
)
(‡)
Symb
ol
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
amb
= 25°C unless otherwise stated)
Min.
-1.0
-30
Typ.
-0.80
14.6
370
1.3
2.6
1.2
1.3
9.5
4
72
38
49
22
5
7
Max.
0.080
0.140
-1.0
100
-1.2
Unit Conditions
nC
nC
nC
nC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
V
ZXMP3F30FH
I
V
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
I
I
D
D
D
D
S
S
DS
GS
GS
GS
DS
DS
DD
DS
G
= -250μA, V
= -1A
= -3A
= -1.7A,V
= -1.5A,di/dt=100A/μs
= -250μA, V
≅ 6.0Ω,
=-30V, V
= -15V, I
= -15V, V
= -15V, V
=±
= -10V, I
= -4.5V, I
= -15V, V
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20V, V
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GS
D
D
GS
D
GS
GS
GS
= -3A
=0V
= -2.5A
DS
DS
GS
= -1.9A
=0V
=0V
= -10V
= -10V
=0V
=V
=0V
GS