DS26C32ATMX/NOPB National Semiconductor, DS26C32ATMX/NOPB Datasheet - Page 2

• Manufacturer Part Number: DS26C32ATMX/NOPB
• Description: IC LINE RCVR QUAD CMOS 16-SOIC
• Manufacturer: National Semiconductor
• Type: Receiverr

Specifications of DS26C32ATMX/NOPB

• Number Of Drivers/receivers: 0/4
• Protocol: RS422, RS423
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Peak Reflow Compatible (260 C): Yes
• Dc: 1030
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *DS26C32ATMX; *DS26C32ATMX/NOPB; DS26C32ATMX; DS26C32ATMXTR

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t
t
V
R
I
V
V
V
V
I
I
I
V
PLH
PHL
IN
OZ
I
CC
Symbol
TH
OH
OL
IH
IL
HYST
Absolute Maximum Ratings
1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
DC Electrical Characteristics
V
IN
AC Electrical Characteristics
V
Symbol
Supply Voltage (V
Common Mode Range (V
Differential Input Voltage (V
Enable Input Voltage (V
Storage Temperature Range (T
Lead Temperature (Soldering 4 sec.)
Maximum Power Dissipation at 25˚C (Note 5)
CC
CC
,
Ceramic “J” Pkg.
Plastic “N” Pkg.
= 5V
= 5V
±
±
Minimum Differential
Input Voltage
Input Resistance
Input Current
Minimum High Level
Output Voltage
Maximum Low Level
Output Voltage
Minimum Enable High
Input Level Voltage
Maximum Enable Low
Input Level Voltage
Maximum TRI-STATE
Output Leakage Current
Maximum Enable Input
Current
Quiescent Power
Supply Current
Input Hysteresis
10% (unless otherwise specified) (Note 1)
10% (Note 3)
Propagation Delay
Input to Output
CC
Parameter
Parameter
)
IN
CM
)
DIFF
)
STG
)
®
)
C
V
V
L
DIFF
CM
−65˚C to +150˚C
V
−7V
V
(Other Input = GND)
V
Other Input = GND
V
Other Input = GND
V
I
V
I
V
ENABLE = V
ENABLE = V
V
V
V
V
= 50 pF
OUT
OUT
IN
IN
IN
CC
DIF
OUT
CC
CC
OUT
IN
CM
Conditions
= 0V
= 2.5V
= −7V, +7V
= +10V,
= −10V,
= V
= Max,
<
(Notes 2,
= +1V
= Min, V
= Max, V
= 0V
= −6.0 mA
= 6.0 mA
2308 mW
1645 mW
= V
= V
V
CC
CM
OH
CC
260˚C
±
±
or GND
14V
14V
<
IL
IH
or GND,
7V
7V
or V
DIFF
DIFF
,
Conditions
+7V
OL
= +1V
= −1V
2
Min
10
This device does not meet 2000V ESD rating. (Note 4)
Operating Conditions
Maximum Current Per Output
Supply Voltage (V
Operating Temperature Range (T
Enable Input Rise or Fall Times
DS26C32AT
DS26C32AM
DS26C32AT
DS26C32AM
DS26C32AT
DS26C32AM
DS26C32AT
DS26C32AM
SOIC “M” Pkg.
Ceramic “E” Pkg.
Ceramic “W” Pkg.
DS26C32AT
DS26C32AM
Typ
19
DS26C32AT
CC
−200
Min
5.0
4.5
3.8
2.0
)
30
Max
+1.1
+1.1
−2.0
−2.0
±
Typ
6.8
6.8
4.2
0.2
35
16
16
60
0.5
A
)
DS26C32AM
4.50
Min
−40
−55 +125
35
+200
Max
+1.5
+1.8
−2.5
−2.7
±
±
0.3
0.8
10
11
23
25
5.0
1.0
Max Units
5.50
+85
500
2108 mW
1215 mW
1190 mW
±
25 mA
Units
˚C
˚C
ns
Units
V
mV
mA
mA
mA
mA
mA
mA
mV
kΩ
kΩ
µA
µA
V
V
V
V
ns