IRF7807PBF International Rectifier, IRF7807PBF Datasheet

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... Rds(on) Qg Qsw Qoss Symbol IRF7807 25°C I 8.3 D 70°C 6 25° 70° STG I 2 θJA PD – 95290 IRF7807PbF IRF7807APbF Device Features IRF7807 IRF7807A 30V 30V 25mΩ 25mΩ 17nC 17nC 5.2nC 16.8nC 16.8nC IRF7807A Units 30 V ±12 8.3 A 6 ...

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IRF7807/APbF Electrical Characteristics Parameter Drain-to-Source V (BR)DSS Breakdown Voltage* Static Drain-Source R (on Resistance* Gate Threshold Voltage* V (th) GS Drain-Source Leakage I DSS Current* Gate-Source Leakage I GSS Current* Total Gate Charge Pre-Vth Q gs1 ...

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Power MOSFET Selection for DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control ...

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IRF7807/APbF For the synchronous MOSFET Q2, R portant characteristic; however, once again the impor- tance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off ...

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IRF7807 Figure 5. Normalized On-Resistance vs. Temperature Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage Figure 9. Typical Rds(on) vs. Gate-to-Source Voltage www.irf.com IRF7807/APbF Typical Characteristics Figure 6. Normalized On-Resistance vs. Temperature Figure 8. Typical Gate Charge vs. Gate-to-Source Voltage ...

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IRF7807/APbF IRF7807 10 ° 150 0.1 0.4 0.5 0.6 0.7 V ,Source-to-Drain Voltage (V) SD Figure 11. Typical Source-Drain Diode Forward Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE ...

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SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

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IRF7807/APbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 ...