DS1245Y-70+ Dallas Semiconductor, DS1245Y-70+ Datasheet - Page 4

• Manufacturer Part Number: DS1245Y-70+
• Description: SRAM, Nonvolatile, 128k x 8, 70 nS, DIP32
• Manufacturer: Dallas Semiconductor

Specifications of DS1245Y-70+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 85 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 1024K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 128K×8
• Package Type: 740 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 70 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

CAPACITANCE
AC ELECTRICAL
CHARACTERISTICS
Write Protection Voltage (DS1245Y)
PARAMETER
Input Capacitance
Input/Output Capacitance
PARAMETER
Read Cycle Time
Access Time
Output High Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from
Output Active from
Data Setup Time
Data Hold Time
OE
CE
OE
to Output Valid
to Output Valid
or
CE
to Output Active
WE
WE
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
ACC
WR1
WR2
t
COE
DH1
DH2
WC
AW
OD
OH
WP
RC
OE
CO
DS
SYMBOL
(t
A
C
V
C
: See Note 10) (V
I/O
TP
IN
MIN
DS1245AB-70
4 of 13
DS1245Y-70
70
70
55
15
30
10
5
5
0
5
5
0
MIN
4.25
MAX
70
35
70
25
25
(V
TYP
4.37
5
5
MIN
DS1245AB-85
CC
CC
DS1245Y-85
85
85
65
15
35
10
5
5
0
5
5
0
=5V ± 5% for DS1245AB)
=5V ± 10% for DS1245Y)
MAX
MAX
4.5
10
10
85
45
85
30
30
UNITS NOTES
UNITS
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
(t
DS1245Y/AB
A
=25°C)
NOTES
12
13
12
13
5
5
3
5
5
4