SI5903DC-T1-E3 Siliconix / Vishay, SI5903DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5903DC-T1-E3
• Description: DUAL P-CH 2.5V (G-S) RATED MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI5903DC-T1-E3

• Channel Type: P
• Current, Drain: ±2.9 A
• Fall Time: 40 ns
• Gate Charge, Total: 6 nC
• Operating And Storage Temperature: –55 to +150 °C
• Package Type: 1206-8 ChipFET®
• Polarization: P-Channel
• Power Dissipation: 1.1 W
• Resistance, Drain To Source On: 0.155 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 60 °C/W
• Time, Rise: 55 ns
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 55 ns
• Transconductance, Forward: 5 S
• Voltage, Breakdown, Drain To Source: –20 V
• Voltage, Diode Forward: –1.2 V
• Voltage, Drain To Source: –20 V
• Voltage, Forward, Diode: –1.2 V
• Voltage, Gate To Source: ±12 V
• Trenchfet® Power Mosfet: 2.5 V Rated
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Document Number: 71054
S-21251—Rev. B, 05-Aug-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
1
0.0
0.0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 2.1 A
V
0.5
GS
On-Resistance vs. Drain Current
= 10 V
2
V
= 2.5 V
SD
Q
0.4
g
-- Source-to-Drain Voltage (V)
I
1.0
D
-- Total Gate Charge (nC)
T
-- Drain Current (A)
J
Gate Charge
= 150_C
4
0.6
1.5
V
GS
0.8
6
= 3.6 V
2.0
1.0
V
GS
T
J
8
= 4.5 V
2.5
= 25_C
1.2
3.0
1.4
10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0
--50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
I
D
--25
GS
= 2.1 A
= 4.5 V
1
4
T
V
V
0
J
GS
DS
C
C
-- Junction Temperature (_C)
oss
iss
-- Gate-to-Source Voltage (V)
-- Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
50
I
D
= 2.1 A
12
3
75
Si5903DC
100
www.vishay.com
16
4
125
150
20
5
2-3