SI5933DC-T1-E3 Siliconix / Vishay, SI5933DC-T1-E3 Datasheet

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SI5933DC-T1-E3

Manufacturer Part Number
SI5933DC-T1-E3
Description
MOSFET, DUAL, 20V, 3.6A, 2.1W, 1206-8
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI5933DC-T1-E3

Lead Free Status / Rohs Status
RoHS Compliant part

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5933DC-T1-E3
Manufacturer:
VISHAY-PB
Quantity:
24 367
Part Number:
SI5933DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
c.
Document Number: 71238
S-50366—Rev. D, 28-Feb-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
i
DS
−20
(V)
J
ti
0.160 @ V
0.240 @ V
0.110 @ V
t A bi
r
D
DS(on)
1
1206-8 ChipFETr
D
J
J
a
a
GS
GS
GS
1
= 150_C)
= 150_C)
t
a
a
Bottom View
D
= −2.5 V
= −1.8 V
= −4.5 V
(W)
S
Parameter
Parameter
2
1
Dual P-Channel 1.8-V (G-S) MOSFET
D
G
2
1
a
a
S
2
1
G
2
a
b, c
I
D
Ordering Information: Si5933DC-T1
−3.6
−3.0
−2.4
(A)
A
= 25_C UNLESS OTHERWISE NOTED)
Q
Steady State
Steady State
g
T
T
T
T
t v 5 sec
Marking Code
A
A
A
A
5.1
(Typ)
= 25_C
= 85_C
= 25_C
= 85_C
DC XX
Si5933DC-T1—E3 (Lead (Pb)-Free)
Part # Code
Lot Traceability
and Date Code
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 1.8-V Rated
G
1
Typical
5 secs
P-Channel MOSFET
−3.6
−2.6
−1.8
2.1
1.1
50
90
30
−55 to 150
S
D
−20
−10
260
1
1
"8
Steady State
Maximum
Vishay Siliconix
G
−2.7
−1.9
−0.9
1.1
0.6
110
60
40
2
P-Channel MOSFET
Si5933DC
S
D
www.vishay.com
2
2
Unit
Unit
Available
_C/W
Pb-free
_C
_C
C/W
W
W
V
V
A
A
1

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SI5933DC-T1-E3 Summary of contents

Page 1

... Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71238 S-50366—Rev. D, 28-Feb-05 I (A) Q (Typ −3.6 −3.0 5.1 −2.4 Marking Code Lot Traceability and Date Code Part # Code Ordering Information: Si5933DC-T1 Si5933DC-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 85_C A ...

Page 2

... Si5933DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... J 1 0.0 0.2 0.4 0.6 0.8 V − Source-to-Drain Voltage (V) SD Document Number: 71238 S-50366—Rev. D, 28-Feb- 4 25_C J 1.0 1.2 1.4 Si5933DC Vishay Siliconix Capacitance 800 C iss 600 400 200 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si5933DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − ...

Page 5

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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