MCP6V06-E/SN Microchip Technology Inc., MCP6V06-E/SN Datasheet - Page 3

• Manufacturer Part Number: MCP6V06-E/SN
• Description: Op-Amp, Auto-Zeroed, Single, High DC Precision, -40 to 125 C, SOIC-8
• Manufacturer: Microchip Technology Inc.

Specifications of MCP6V06-E/SN

• Amplifier Type: Auto-Zeroed, Low Offset Voltage, Low Power, Low Voltage, Precision, Rail-to-Rail, Single Supply
• Bandwidth: 1.3 MHz
• Common Mode Rejection Ratio: 106
• Current, Input Bias: +1500 pA
• Current, Input Offset: -85 pA
• Current, Output: ±30 mA
• Current, Supply: ±30 mA
• Number Of Amplifiers: Single
• Package Type: SOIC-8
• Slew Rate: 0.5
• Temperature, Operating, Range: -40 to +125 °C
• Voltage, Gain: 147 dB
• Voltage, Input: 1.5 to 2.1 V
• Voltage, Noise: 52 nV/sqrt Hz
• Voltage, Offset: +3 μV
• Voltage, Output, High: 1785 mV
• Voltage, Output, Low: 1785 mV
• Voltage, Supply: 1.8 to 5.5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

MCP6V06/7/8
TABLE 1-1:
TABLE 1-2:
DS22093B-page 4
Electrical Characteristics: Unless otherwise indicated, T
V
Output
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per amplifier
POR Trip Voltage
Note 1:
Electrical Characteristics: Unless otherwise indicated, T
V
Amplifier AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Amplifier Distortion (Note 1)
Intermodulation Distortion (AC)
Amplifier Step Response
Start Up Time
Offset Correction Settling Time
Output Overdrive Recovery Time
Note 1:
OUT
OUT
= V
= V
2:
2:
DD
DD
/2, V
/2, V
Set by design and characterization. Due to thermal junction and other effects in the production environment, these
parts can only be screened in production (except TC
Figure 2-18
These parameters were characterized using the circuit in
tone at DC and a residual tone at1 kHz; all other IMD and clock tones are spread by the randomization circuitry.
t
Parameters
ODR
Parameters
L
L
includes some uncertainty due to clock edge timing.
= V
= V
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
AC ELECTRICAL SPECIFICATIONS
DD
DD
/2, R
shows how V
/2, R
L
L
= 20 kΩ to V
= 20 kΩ to V
CMR
GBWP
Sym
t
changed across temperature for the first three production lots.
IMD
IMD
t
t
PM
ODR
SR
STR
E
E
e
e
STL
L
L
i
ni
, and CS = GND (refer to
, C
ni
ni
ni
ni
V
OL
L
Sym
V
V
I
I
= 60 pF, and CS = GND (refer to
POR
SC
SC
I
, V
DD
Q
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
—
—
—
OH
0.54
500
300
100
A
A
1.3
0.5
1.7
0.6
V
65
82
52
32
25
SS
= +25°C, V
= +25°C, V
Min
1.15
200
1.8
—
—
+ 15
1
; see Appendix B: “Offset Related Test Screens”).
—
—
—
—
—
—
—
—
—
—
—
—
—
Figure
Figure 1-5
DD
DD
nV/√Hz f < 2.5 kHz
nV/√Hz f = 100 kHz
Typ
±22
300
fA/√Hz
µV
µV
±7
µV
µV
—
—
—
MHz
V/µs
µs
µs
µs
= +1.8V to +5.5V, V
= +1.8V to +5.5V, V
°
P-P
P-P
PK
PK
1-7.
V
G = +1
f = 0.01 Hz to 1 Hz
f = 0.1 Hz to 10 Hz
V
V
V
G = +1, V
V
G = -100, ±0.5V input overdrive to V
V
and
Figure 2-37
DD
Figure 1-5
CM
CM
OS
OS
IN
Max
1.65
400
5.5
—
—
50% point to V
− 15
Figure
within 50 µV of its final value
within 50 µV of its final value
tone = 50 mV
tone = 50 mV
IN
1-6).
Units
step of 2V,
and
and
SS
SS
mV
mA
mA
µA
V
V
= GND, V
= GND, V
Figure
© 2008 Microchip Technology Inc.
Figure 2-38
Conditions
PK
PK
OUT
G = +2, 0.5V input overdrive
V
V
I
at 1 kHz, G
at 1 kHz, G
O
DD
DD
90% point (Note 2)
= 0
1-6).
= 1.8V
= 5.5V
CM
CM
Conditions
= V
= V
show both an IMD
N
N
DD
DD
= 1, V
= 1, V
/3,
/3,
DD
/2,
DD
DD
= 1.8V
= 5.5V