SI5445BDC-T1-E3 Siliconix / Vishay, SI5445BDC-T1-E3 Datasheet
SI5445BDC-T1-E3
Manufacturer Part Number
SI5445BDC-T1-E3
Description
MOSFET, Power; P-Ch; VDSS -8V; RDS(ON) 0.027Ohm; ID -5.2A; 1206-8 ChipFET; PD 1.3W
Manufacturer
Siliconix / Vishay
Datasheet
1.SI5445BDC-T1-E3.pdf
(2 pages)
Specifications of SI5445BDC-T1-E3
Current, Drain
-5.2 A
Gate Charge, Total
14 nC
Package Type
1206-8 ChipFET®
Polarization
P-Channel
Power Dissipation
1.3 W
Resistance, Drain To Source On
0.027 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
75 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
18 S
Voltage, Breakdown, Drain To Source
-8 V
Voltage, Forward, Diode
-0.8 V
Voltage, Gate To Source
±8 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI5445BDC-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
86 988
Company:
Part Number:
SI5445BDC-T1-E3
Manufacturer:
Intel
Quantity:
40
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Ordering Information: Si5445BDC-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
DS
- 8
(V)
D
1206-8 ChipFET
D
Bottom View
0.033 at V
0.043 at V
0.060 at V
D
D
R
S
Si5445BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
DS(on)
D
GS
GS
GS
1
®
G
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
a
J
a
= 150 °C)
a
P-Channel 1.8-V (G-S) MOSFET
Marking Code
a
BM XX
I
D
- 7.1
- 6.2
- 5.3
(A)
Part # Code
b, c
Lot Traceability
and Date Code
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
T
T
T
T
(Typ.)
14
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
•
Symbol
Symbol
T
R
R
Available
TrenchFET
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
- 7.1
- 5.2
- 2.1
G
5 s
2.5
1.3
45
85
17
P-Channel MOSFET
- 55 to 150
± 20
260
± 8
- 8
S
D
Steady State
Maximum
- 5.2
- 3.7
- 1.1
1.3
0.7
50
95
20
Vishay Siliconix
Si5445BDC
°C/W
Unit
Unit
°C
W
V
A
1
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SI5445BDC-T1-E3 Summary of contents
Page 1
... V GS 1206-8 ChipFET ® Marking Code Bottom View Ordering Information: Si5445BDC-T1-E3 (Lead (Pb)-free) Si5445BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current a Continuous Source Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... Si5445BDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...