DG308BDY-E3 Siliconix / Vishay, DG308BDY-E3 Datasheet - Page 2

• Manufacturer Part Number: DG308BDY-E3
• Description: QUAD SPST ANALOG SWITCH
• Manufacturer: Siliconix / Vishay
• Type: 4-Channelr

Specifications of DG308BDY-E3

• Charge Injection: 1 pC
• Current, Source, Off-state: 0.50 nA
• Number Of Channels: 4
• Package: 16-Pin SOIC N
• Package Type: 16-Pin SOIC N
• Primary Type: Analog
• Resistance, Drain To Source On: 85 Ohms
• Switch Type: SPST
• Time, Turn-on: 200 ns
• Voltage, Supply: 44
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

DG308B/309B
Vishay Siliconix
Notes:
a. Signals on S
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced, V+ to V-
GND
Digital Inputs
Current, Any Terminal
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max)
Storage Temperature
Power Dissipation (Package)
Temp Range
- 40 to 85 °C
a
X
, V
, D
S
X
, V
, or IN
D
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b
(AK Suffix)
(DJ, DY and DQ Suffix)
16-Pin Plastic DIP
16-Pin Narrow SOIC and TSSOP
16-Pin CerDIP
16-Pin Narrow SOIC
16-Pin PlasticDIP
e
16-Pin TSSOP
c
Package
d
30 mA, whichever occurs first
(V-) - 2 to (V+) + 2
- 65 to 150
- 65 to 125
Limit
100
470
640
900
44
25
30
or
DG308BDQ-T1-E3
DG309BDQ-T1-E3
DG308BDY-T1-E3
DG309BDY-T1-E3
DG308BDQ-E3
DG308BDQ-T1
DG309BDQ-E3
DG309BDQ-T1
DG308BDJ-E3
DG309BDJ-E3
DG308BDY-E3
DG309BDY-E3
DG308BDY-T1
DG309BDY-T1
Part Number
DG308BDQ
DG309BDQ
DG308BDJ
DG309BDJ
DG308BDY
DG309BDY
S-71241–Rev. F, 25-Jun-07
Document Number: 70047
Unit
mW
mA
°C
V