DG413DY-E3 Siliconix / Vishay, DG413DY-E3 Datasheet - Page 7

• Manufacturer Part Number: DG413DY-E3
• Description: Switch; SPST; 16-Pin Narrow SOIC; 25 Ohms (Typ.); 0.1 nA (Typ.); 30 mA
• Manufacturer: Siliconix / Vishay
• Type: 4-Channelr

Specifications of DG413DY-E3

• Charge Injection: 5 pC
• Current, Source, Off-state: 0.25 nA
• Number Of Channels: 4
• Package: 16-Pin SOIC N
• Package Type: 16-Pin SOIC N
• Power Consumption: 0.350 μW
• Primary Type: Analog
• Resistance, Drain To Source On: 25 Ohms
• Switch Type: SPST
• Time, Turn-on: 110 ns
• Voltage, Supply: 44
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TEST CIRCUITS
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
V
g
V
V
S1
S2
3 V
R
S
IN
S
IN
g
1
2
GND
+ 5 V
1
2
V
L
C = RF bypass
C
L
S
IN
+ 5 V
GND
(includes fixture and stray capacitance)
X
V
TA LK
L
Isolation = 20 log
+ 15 V
- 15 V
V+
V-
V
S
D
D
1
2
+ 15 V
- 15 V
R
V+
V-
g
D
= 50 Ω
R
300
L2
0 V, 2.4 V
0 V, 2.4 V
Ω
Figure 3. Break-Before-Make (DG413)
V
V
NC
C
35 pF
O
S
V
L2
10 nF
O2
C
C
Figure 4. Charge Injection
L
Figure 5. Crosstalk
S
IN
S
IN
V
R
300 Ω
1
2
O
+ 5 V
1
2
L1
V
GND
L
C
35 pF
L1
V
IN
by sense of switch.
- 15 V
O1
V-
X
+ 15 V
V+
dependent on switch configuration Input polarity determined
D
D
1
2
C
IN
IN
V
C
Logic
Input
Switch
Output
Switch
Output
O
X
X
OFF
OFF
50 Ω
R
L
V
V
V
V
3 V
0 V
0 V
0 V
V
O1
O2
S1
S2
O
Q = ΔV
DG411/412/413
ON
ON
50 %
90 %
t
Vishay Siliconix
D
O
x C
L
90 %
www.vishay.com
OFF
OFF
ΔV
t
O
D
7