MBR10100-E3/4W General Semiconductor / Vishay, MBR10100-E3/4W Datasheet - Page 2

• Manufacturer Part Number: MBR10100-E3/4W
• Description: Rectifier; TO-220AC; 10 A; 0.8 V; 100 V; 10000 V/us; 2 degC/W
• Manufacturer: General Semiconductor / Vishay

Specifications of MBR10100-E3/4W

• Current, Forward: 10 A
• Current, Reverse: 6 mA
• Current, Surge: 150 A
• Package Type: TO-220AC
• Primary Type: Schottky Barrier
• Resistance, Thermal, Junction To Case: 2 °C/W
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -65 to +150 °C
• Voltage, Forward: 0.65 V
• Voltage, Reverse: 100 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(T
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current at working peak
reverse voltage
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
A
= 25 °C unless otherwise noted)
10
8
6
4
2
0
0
Figure 1. Forward Current Derating Curve
(2)
Resistive or Inductive Load
Case Temperature (°C)
50
MBR10100-E3/4W
MBRF10100-E3/4W
MBRB10100-E3/4W
MBRB10100-E3/8W
PREFERRED P/N
100
(1)
I
I
I
F
F
F
= 10 A
= 10 A
= 20 A
TEST CONDITIONS
C
UNIT WEIGHT (g)
= 25 °C unless otherwise noted)
150
C
= 25 °C unless otherwise noted)
1.845
1.661
1.384
1.384
T
T
T
T
T
SYMBOL
C
C
C
J
J
= 25 °C
= 100 °C
= 125 °C
= 125 °C
= 25 °C
R
R
θJA
θJC
MBR(F,B)1090 & MBR(F,B)10100
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE CODE
SYMBOL
160
140
120
100
MBR
80
60
40
V
2.0
I
60
R
4W
4W
4W
8W
F
1
Vishay General Semiconductor
Number of Cycles at 60 Hz
MBRF
BASE QUANTITY
3.5
-
800/reel
50/tube
50/tube
50/tube
T
8.3 ms Single Half Sine-Wave
VALUE
J
0.80
0.65
0.75
100
10
= T
6.0
J
max.
MBRB
2.0
60
DELIVERY MODE
Tape and reel
Tube
Tube
Tube
100
UNIT
UNIT
°C/W
mA
µA
V
477