VTP1112H Excelitas Technologies Sensors, VTP1112H Datasheet - Page 2
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VTP1112H
Manufacturer Part Number
VTP1112H
Description
SILICON PHOTODIODES
Manufacturer
Excelitas Technologies Sensors
Datasheet
1.VTP1112H.pdf
(2 pages)
Specifications of VTP1112H
Active Area
0.0025 sq.in.
Angle, Response
±15 °
Capacitance, Junction
6 pF
Current, Dark
7 nA
Current, Short Circuit
90 μA
Package Type
TO-46
Primary Type
Photo
Resistance, Shunt
0.5
Spectral Application Range
400 to 1150
Spectral Sensitivity
0.55
Temperature, Operating
-40 to +110 °C
Voltage, Breakdown
140 V
Voltage, Open Circuit
350 mV
Lead Free Status / Rohs Status
RoHS Compliant part
VTP Process Photodiodes
FEATURES
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Visible to enhanced IR spectral range
Integral visible rejection filters available
Response @ 940 nm, 0.60 A/W, typical
-1 to 2% linearity over 7 to 9 decades
Low dark currents
High shunt resistance
High reverse voltage rating
Low capacitance
FAST RESPONSE, HIGH DARK RESISTANCE
VTP PROCESS
37
PRODUCT DESCRIPTION
Photodiodes in this series have been designed for low junction
capacitance. The lower the capacitance, the faster the response
of the diode. Also, speed can be further increased by reverse
biasing the diodes which lowers the capacitance even more.
These diodes have excellent response in the IR region and are
well matched to IR LEDs. Responsivity is categorized at 940 nm
(GaAs LED). Some diodes are available in packages which
incorporate a visible rejection filter effectively blocking any light
below 700 nm.
Diodes made with the VTP process are suitable for operation
under reverse bias conditions but may be used in the
photovoltaic mode. Typical reverse breakdown voltages are
around 140 V. Low dark currents under reverse bias are also a
feature of this series.