IRFR3505TRLPBF International Rectifier, IRFR3505TRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR3505TRLPBF
• Description: MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.011Ohm; ID 30A; D-Pak (TO-252AA); PD 140W
• Manufacturer: International Rectifier

Specifications of IRFR3505TRLPBF

• Current, Drain: 30 A
• Gate Charge, Total: 62 nC
• Package Type: D-Pak (TO-252AA)
• Polarization: N-Channel
• Power Dissipation: 140 W
• Resistance, Drain To Source On: 0.011 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 43 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 41 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics @ T
Notes 
Source-Drain Ratings and Characteristics
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
2
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
(BR)DSS
eff.
/∆T
through ˆ are on page 11
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
Parameter
Parameter
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.057 –––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
55
41
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.011 0.013
2030 –––
2600 –––
–––
–––
–––
–––
–––
–––
470
330
630
––– -200
–––
–––
–––
180
22
91
62
17
13
43
54
70
74
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
105
270
4.0
1.3
20
93
26
33
280
71
V/°C
nC
nH
nC
µA
nA
ns
pF
ns
Ω
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 30A
= 30A
= 25°C, I
= 25°C, I
= 6.8Ω
= 0V, I
= 10V, I
= 10V, I
= 25V, I
= 55V, V
= 55V, V
= 20V
= -20V
= 44V
= 10V„
= 28V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
GS
GS
Conditions
= 30A, V
= 30A, V
= 30A „
= 250µA
= 30A
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
D
DD
= 1mA
GS
J
= 125°C
= 0V „
= 28V
G
G
S
+L
D
S
D
)
S
D