1N4148W-V-GS08/BKN Vishay / Small Signal & Opto Products (SSP), 1N4148W-V-GS08/BKN Datasheet - Page 2

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1N4148W-V-GS08/BKN

Manufacturer Part Number
1N4148W-V-GS08/BKN
Description
SMALL SIGNAL DIODE, 100V, 500MA, 4NS, SOD-123, CUT TAPE
Manufacturer
Vishay / Small Signal & Opto Products (SSP)
Datasheet

Specifications of 1N4148W-V-GS08/BKN

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
1N4148W-V-G
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Leakage current
Diode capacitance
Voltage rise when switching ON
(tested with 50 mA pulses)
Reverse recovery time
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
17437
17438
Figure 2. Dynamic Forward Resistance vs.
Parameter
10
10
10
10
10
10
10
10
10
1
4
5
2
3
2
3
2
-1
-2
5
2
5
2
5
2
10
Figure 1. Forward characteristics
0
-2
T
j
Forward Current
= 100 °C
10
-1
I
F
V
(mA)
I
F
F
1
1
t
For technical support, please contact:
(V)
p
= 10 mA, I
tested with 50 mA pulses,
T
= 0.1 µs, rise time < 30 ns,
j
V
= 25 °C
R
f
p
= 20 V, T
Test condition
V
= (5 to 100) kHz
T
I
10
V
R
f = 1 kHz
F
I
F
V
V
j
F
= 25 °C
R
L
= 100 mA
= V
R
R
R
= 10 mA
= 100 Ω
= 100 V
= 1 mA, V
= 20 V
= 75 V
R
J
= 0 V
= 150 °C
10
2
2
R
= 6 V,
Symbol
C
V
V
V
I
I
I
I
t
R
R
R
R
rr
DiodesSSP@vishay.com
F
F
D
fr
20809
17440
Figure 4. Relative Capacitance vs. Reverse Voltage
500
450
400
350
300
250
200
150
100
50
1.0
0.9
0.8
0.7
Figure 3. Admissible Power Dissipation vs.
1.1
0
0
Min.
0
T
amb
Ambient Temperature
2
- Ambient Temperature (°C)
50
Typ.
4
V
R
(V)
6
100
Document Number 81139
T
f = 1 MHz
Max.
1000
1200
j
100
2.5
25
50
= 25 °C
5
4
4
Rev. 1.0, 02-Jun-09
8
150
10
Unit
mV
mV
nA
µA
µA
µA
pF
ns
V

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