SI6544BDQ-T1-E3/BKN Siliconix / Vishay, SI6544BDQ-T1-E3/BKN Datasheet - Page 7

• Manufacturer Part Number: SI6544BDQ-T1-E3/BKN
• Description: N- AND P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI6544BDQ-T1-E3/BKN

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72244
S-81056-Rev. B, 12-May-08
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
20
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
T
J
0.3
= 150 °C
V
I
D
SD
0
= 250 µA
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
- Temperature (°C)
25
0.6
50
0.9
T
75
J
= 25 °C
0.01
100
0.1
10
100
1
0.1
1.2
Limited by R
Safe Operating Area, Junction-to-Case
* V
125
GS
> minimum V
150
1.5
V
DS
Single Pulse
DS(on)
T
C
- Drain-to-Source Voltage (V)
1
= 25 °C
*
GS
at which R
10
0.20
0.16
0.12
0.08
0.04
0.00
200
160
120
DS(on)
80
40
0
10
0
-3
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
10
100
GS
-2
- Gate-to-Source Voltage (V)
4
Time (s)
I
D
10
= 3.8 A
Vishay Siliconix
-1
Si6544BDQ
6
www.vishay.com
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