NTE2312 NTE Electronics, Inc., NTE2312 Datasheet - Page 2

• Manufacturer Part Number: NTE2312
• Description: Transistor, NPN; TO-220; NPN; 700 V; 9 V; 8 A; -65 to 150 degC; 62.5 degC/W; 5
• Manufacturer: NTE Electronics, Inc.
• Type: High Voltage, Switchr

Specifications of NTE2312

• Current, Collector: 8 A
• Current, Emitter: 12 A
• Current, Gain: 5 to 30
• Frequency: 4 MHz
• Gain, Dc Current, Maximum: 30
• Gain, Dc Current, Minimum: 5
• Package Type: TO-220
• Polarity: NPN
• Power Dissipation: 2 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.56 °C/W
• Temperature, Junction, Operating: -65 to 150 °C
• Thermal Resistance, Junction To Ambient: 62.5 °C⁄W
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Emitter: 400 V
• Voltage, Collector To Emitter: 400 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Emitter To Base: 9 V

Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
Current–Gain Bandwidth Product
Output Capacitance
Switching Characteristics (Resistive Load)
Delay Time
Rise Time
Storage Time
Fall Time
Switching Characteristics (Inductive Load), Clamped
Voltage Storage Time
Crossover Time
Parameter
C
= +25 C unless otherwise specified)
V
Symbol
V
V
CEO(sus)
CE(sat)
BE(sat)
I
I
h
C
CEV
EBO
t
f
t
t
t
t
t
sv
FE
T
ob
d
s
c
r
f
I
V
V
T
V
I
I
I
I
I
I
I
I
I
I
V
V
I
Duty Cycle
Duty Cycle
I
V
C
C
C
C
C
C
C
C
C
C
C
B1
C
C
CEV
CEV
EB
CB
CC
BE(off)
= 10mA, I
= 2A, V
= 5A, V
= 2A, I
= 5A, I
= 8A, I
= 5A, I
= 2A, I
= 5A, I
= 5A, I
= 500mA, V
= 5A, V
= +100 C
= I
= 9V, I
= –10V, I
= 125V, I
= 700V, V
= 700V, V
B2
= 5V, T
Test Conditions
= 1A, t
B
B
B
B
B
B
B
CE
CE
clamp
c
= 0.4A
= 1A
= 2A
= 1A, T
= 0.4A
= 1A
= 1A, T
B
= 0
= 5V
= 5V
1%
1%
E
C
= 0
CE
C
= 0, f = 0.1MHz
p
= 300V, I
BE(off)
BE(off)
= 5A,
= +100 C
= 25 s,
= 10V, f = 1MHz
C
C
= +100 C
= +100 C
= 1.5V
= 1.5V,
B1
= 1A,
Min
400
–
–
–
8
5
–
–
–
–
–
–
–
4
–
–
–
–
–
–
–
0.05
0.15
0.86
0.14
Typ
110
0.8
1.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
1.2
1.6
1.5
0.1
1.5
3.0
0.7
2.3
0.7
60
30
–
1
5
1
1
2
3
3
–
–
Unit
MHz
mA
mA
mA
pF
V
V
V
V
V
V
V
V
s
s
s
s
s
s