SKM 200GB12E4 Sindopower / Semikron, SKM 200GB12E4 Datasheet - Page 4
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SKM 200GB12E4
Manufacturer Part Number
SKM 200GB12E4
Description
IGBT; D-56; IGBT; 1200 V; 310 A; 1200 V; 20 V; 5.5 V (Typ.)
Manufacturer
Sindopower / Semikron
Type
SPTr
Datasheet
1.SKM_200GB12E4.pdf
(4 pages)
Specifications of SKM 200GB12E4
Capacitance, Gate
13 nF
Current, Collector
300 A
Energy Rating
33 mJ
Fall Time
55 ns
Operating And Storage Temperature
-40 to 150°C (Operating), -40 to 125°C (Storage)
Package Type
D56
Polarity
N-Channel
Primary Type
Si
Resistance, Thermal, Junction To Case
0.095 K/W
Switching Loss
18 mJ
Time, Rise
50 ns
Transistor Type
IGBT
Voltage, Breakdown, Collector To Emitter
1200 V
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
1.9 V
Voltage, Gate Threshold, Range
5.5 V
Voltage, Gate To Source
±20 V
Voltage, Saturation, Collector To Emitter
1200 V
Lead Free Status / Rohs Status
RoHS Compliant part
SKM 200GB128D
UL Recognized
File no. 63 532
6
11-09-2006 SEN
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