MCP6004-I/SL Microchip Technology Inc., MCP6004-I/SL Datasheet - Page 3
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MCP6004-I/SL
Manufacturer Part Number
MCP6004-I/SL
Description
QUAD 1.8V, 1MHZ OP, I TEMP
Manufacturer
Microchip Technology Inc.
Datasheet
1.MCP6004-ISL.pdf
(5 pages)
Specifications of MCP6004-I/SL
Amplifier Type
General Purpose, Low Power, Power, Rail-to-Rail, Single Supply
Bandwidth
1 MHz
Common Mode Rejection Ratio
76
Current, Input Bias
19 pA
Current, Input Offset
±1 pA
Current, Output
±30 mA
Current, Supply
±30 mA
Number Of Amplifiers
Quad
Package Type
SOIC-14
Slew Rate
0.6
Temperature, Operating, Range
-40 to +85 °C
Voltage, Gain
112 dB
Voltage, Input
1.5 to 2.1 V
Voltage, Noise
28 nV/sqrt Hz
Voltage, Offset
+4.5 mV
Voltage, Output, High
1775 mV
Voltage, Output, Low
1775 mV
Voltage, Supply
1.8 to 6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP6004-I/SL
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
Part Number:
MCP6004-I/SL,MCP6004T-I/SL
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
AC ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
1.1
The test circuits used for the DC and AC tests are
shown in
capacitors are laid out according to the rules discussed
in Section 4.4 “Supply Bypass”.
FIGURE 1-1:
Most Non-Inverting Gain Conditions.
© 2008 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
Temperature Ranges
Industrial Temperature Range
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC (150 mil)
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
V
L
Note:
V
DD
= V
IN
/2
DD
Test Circuits
R
R
/2, V
G
N
Figure 1-1
The industrial temperature devices operate over this extended temperature range, but with reduced
performance. In any case, the internal Junction Temperature (T
specification of +150°C.
OUT
Parameters
Parameters
MCP600X
≈ V
V
DD
AC and DC Test Circuit for
DD
and
/2, R
0.1 µF
R
Figure
L
F
= 10 kΩ to V
1 µF
1-2. The bypass
C
L
L
V
, and C
GBWP
Sym
θ
θ
θ
θ
θ
θ
θ
θ
L
Sym
T
T
T
T
PM
SR
E
e
JA
JA
JA
JA
JA
JA
JA
JA
V
R
i
A
A
A
A
ni
ni
ni
OUT
L
L
= 60 pF (refer to
A
Min
Min
-40
-40
-40
-65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= +25°C, V
DD
= +1.8V to +5.5V and V
FIGURE 1-2:
Most Inverting Gain Conditions.
V
Typ
1.0
0.6
6.1
0.6
V
MCP6001/1R/1U/2/4
90
28
DD
Typ
331
256
163
206
120
100
85
70
—
—
—
—
IN
DD
/2
Figure 1-1
= +1.8 to 5.5V, V
R
R
G
N
J
Max
) must not exceed the Absolute Maximum
—
—
—
—
—
—
+125
+125
+150
Max
+85
—
—
—
—
—
—
—
—
MCP600X
and
nV/√Hz
fA/√Hz
V
µVp-p
Units
SS
MHz
V/µs
AC and DC Test Circuit for
Figure 1-2
DD
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°
°C
°C
°C
°C
= GND.
SS
0.1 µF
R
= GND, V
F
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
Note
).
1 µF
Conditions
Conditions
DS21733H-page 3
CM
C
= V
L
V
DD
L
V
R
/2,
OUT
L