IRFD9014PBF Vishay PCS, IRFD9014PBF Datasheet

IRFD9014PBF

Manufacturer Part Number

IRFD9014PBF

Description

MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ohm; ID -1.1A; HD-1; PD 1.3W; VGS +/-20V; -55

Manufacturer

Vishay PCS

Datasheet

1.IRFD9014PBF.pdf (8 pages)

Specifications of IRFD9014PBF

Current, Drain

-1.1 A

Gate Charge, Total

12 nC

Package Type

HD-1

Polarization

P-Channel

Power Dissipation

1.3 W

Resistance, Drain To Source On

0.5 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

10 ns

Time, Turn-on Delay

11 ns

Transconductance, Forward

0.7 S

Voltage, Breakdown, Drain To Source

-60 V

Voltage, Forward, Diode

-5.5 V

Voltage, Gate To Source

±20 V

Lead Free Status / Rohs Status

RoHS Compliant part

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFD9014PBF

Manufacturer:

Quantity:

8 529

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFD9014PBF

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 8
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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91125

S09-1829-Rev. B, 21-Sep-09

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

DS(on)

(Max.) (nC)

(nC)

(V)

≤ 10 A, dI/dt ≤ 90 A/µs, V

= 25 V, starting T

(Ω)

HVMDIP

= 25 °C, L = 52 mH, R

≤ V

= 10 V

, T

N-Channel MOSFET

≤ 175 °C.

Single

3.1

5.8

= 25 Ω, I

Power MOSFET

= 25 °C, unless otherwise noted

0.20

at 10 V

= 1.7 A (see fig. 12).

for 10 s

= 25 °C

HVMDIP

IRFD014PbF

SiHFD014-E3

IRFD014

SiHFD014

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• For Automatic Insertion

• End Stackable

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case

style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up to

1 W.

SYMBOL

dV/dt

, T

device

stg

IRFD014, SiHFD014

design,

- 55 to + 175

0.0083

LIMIT

300

± 20

130

1.7

1.2

1.3

4.5

low

Vishay Siliconix

on-resistance

www.vishay.com

UNIT

W/°C

V/ns

RoHS*

COMPLIANT

°C

Available

and

Related parts for IRFD9014PBF

IRFD9014PBF Summary of contents

Page 1

PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration HVMDIP ORDERING INFORMATION Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS T PARAMETER ...

IRFD014, SiHFD014 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91125 S09-1829-Rev. B, 21-Sep- °C Fig Typical Transfer Characteristics C Fig ...

Page 4

IRFD014, SiHFD014 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: ...

Page 5

Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U 0. ...

Page 6

IRFD014, SiHFD014 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 ...

Page 7

D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data ...

Page 8

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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