MCP6S28-I/SL Microchip Technology Inc., MCP6S28-I/SL Datasheet - Page 5

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MCP6S28-I/SL

Manufacturer Part Number
MCP6S28-I/SL
Description
Amplifier; 8-Ch 12 MHz SPI PGA
Manufacturer
Microchip Technology Inc.
Type
Low Gainr
Datasheet

Specifications of MCP6S28-I/SL

Amplifier Type
Programmable Gain
Bandwidth
2 to 12 MHz
Current, Input Bias
±1 pA
Current, Output
±30 mA
Current, Supply
1 mA
Harmonic Distortion
0.036 %
Impedance, Thermal
90 °C/W
Package Type
SOIC-16
Propagation Delay
80 ns
Resistance, Input
4.9 Kilohms
Slew Rate
22
Temperature, Operating, Range
-40 to +85 °C
Time, Fall
2 μs (Input), 5 ns (Output)
Time, Rise
2 μs (Input), 5 ns (Output)
Voltage, Gain
1-32 V/V
Voltage, Input
5.8 V
Voltage, Input Offset
-275 to +275 μV
Voltage, Noise
26 μVp-p
Voltage, Output Swing
5440 mV
Voltage, Supply
2.5 to 5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP6S28-I/SL
Manufacturer:
ON
Quantity:
918
TEMPERATURE CHARACTERISTICS
FIGURE 1-1:
Diagram.
FIGURE 1-2:
diagram (must enter correct commands before
CS goes high).
Electrical Specifications: Unless otherwise indicated, V
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Thermal Resistance, 16L-PDIP
Thermal Resistance, 16L-SOIC
Note 1: The MCP6S21/2/6/8 family of PGAs operates over this extended temperature range, but with reduced
V
2003 Microchip Technology Inc.
OUT
CS
I
SS
500 nA (typ)
performance. Operation in this range must not cause T
(150°C).
Parameters
Hi-Z
V
OUT
CS
t
ON
0.6V
Channel Select Timing
PGA Shutdown timing
t
CH
1.0 mA (typ)
0.3V
0.3V
Sym
T
T
T
t
JA
JA
JA
JA
JA
JA
JA
JA
OFF
A
A
A
Hi-Z
Min
-40
-40
-65
DD
Typ
163
206
120
100
85
70
70
90
= +2.5V to +5.5V, V
FIGURE 1-3:
Diagram.
FIGURE 1-4:
down timing diagram.
V
J
+125
+150
Max
V
+85
OUT
to exceed the Maximum Junction Temperature
I
DD
SS
V
POR
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
V
°C
°C
°C
OUT
CS
- 0.1V
500 nA (typ)
MCP6S21/2/6/8
Hi-Z
SS
(Note Note:)
= GND.
1.5V
Gain Select Timing
POR power-up and power-
t
RPU
V
t
POR
G
+ 0.1V
Conditions
1.0 mA (typ)
0.3V
0.3V
DS21117A-page 5
t
RPD
V
POR
Hi-Z
- 0.1V

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