SI1034X-T1-E3 Siliconix / Vishay, SI1034X-T1-E3 Datasheet

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SI1034X-T1-E3

Manufacturer Part Number
SI1034X-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 5 Ohms; ID 180mA; SC-89 (SOT-490); PD 250mW
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI1034X-T1-E3

Channel Type
N
Current, Drain
180 mA
Gate Charge, Total
750 pC
Package Type
SC-89 (SOT-490)
Polarization
N-Channel
Power Dissipation
250 mW
Resistance, Drain To Source On
5 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–55 °C
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
50 ns
Transconductance, Forward
0.5 S
Voltage, Breakdown, Drain To Source
20 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±5 V
Lead Free Status / Rohs Status
RoHS Compliant part

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1034X-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
G
D
S
Ordering Information: Si1034X-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
1
1
2
V
1
2
3
DS
20
(V)
Top View
SC-89
Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free)
b
10 at V
5 at V
7 at V
9 at V
6
5
4
R
DS(on)
D
G
S
GS
GS
GS
J
a
GS
1
2
2
= 150 °C)
= 4.5 V
= 2.5 V
= 1.8 V
= 1.5 V
(Ω)
N-Channel 20-V (D-S) MOSFET
a
Marking Code: L
I
D
200
175
150
A
(mA)
50
= 25 °C, unless otherwise noted
T
T
T
T
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• Low-Side Switching
• Low On-Resistance: 5 Ω
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 35 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
Symbol
T
Memories
J
ESD
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
®
Power MOSFET: 1.5 V Rated
190
140
450
280
145
5 s
- 55 to 150
2000
650
± 5
20
Steady State
180
130
380
250
130
Vishay Siliconix
Si1034X
Unit
mW
mA
°C
V
V
RoHS
COMPLIANT
1

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SI1034X-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si1034X-T1-E3 (Lead (Pb)-free) Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1034X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge ...

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