SI3911DV-T1-E3 Siliconix / Vishay, SI3911DV-T1-E3 Datasheet

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... 2.85 mm Ordering Information: Si3911DV-T1-E3 (Lead (Pb)-free) Si3911DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si3911DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

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... Gate Charge 150 ° 0.1 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71380 S09-2276-Rev. C, 02-Nov- 4 °C J 0.9 1.2 1.5 Si3911DV Vishay Siliconix 600 500 C iss 400 300 200 C oss 100 C rss Drain-to-Source Voltage (V) DS Capacitance 1.6 1 ...

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... Si3911DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...