IRF7836PBF International Rectifier, IRF7836PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7836PBF
• Description: MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.5 Milliohms; ID 17A; SO-8; PD 2.5W; VGS +/-20V
• Manufacturer: International Rectifier

Specifications of IRF7836PBF

• Current, Drain: 17 A
• Gate Charge, Total: 18 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 4.5 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 12 ns
• Time, Turn-on Delay: 8.9 ns
• Transconductance, Forward: 70 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

IRF7836PbF
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
DS(on)
GS(th)
g
iss
oss
rss
AS
SD
2
g
sw
oss
rr
Q
Q
Q
Q
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
Ù
Parameter
Parameter
gs2
™
+ Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
70
0.024
2400
-6.2
–––
–––
–––
–––
–––
–––
500
230
–––
–––
–––
4.5
5.7
1.8
4.1
1.5
5.8
6.6
7.3
1.0
8.9
4.2
18
11
11
12
15
17
Typ.
2.35
-100
–––
–––
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
5.7
7.1
1.0
1.7
3.1
1.0
27
23
26
V/°C
mΩ
nC
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 17 & 18
V
V
I
Clamped Inductive Load
See Fig. 15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 500A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 13A
= 13A
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 20V
= -20V
= 15V, I
= 15V
= 4.5V
= 16V, V
= 15V, V
= 0V
= 15V
GS
Max.
130
, I
13
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 50µA
= 13A, V
= 13A, V
= 17A
= 13A
= 13A
= 0V
= 0V, T
= 0V
= 4.5V
eÃ
See Fig. 16
D
e
e
= 1mA
G
DD
GS
J
= 125°C
= 15V
= 0V
Units
mJ
A
e
D
S