NTE2388 NTE Electronics, Inc., NTE2388 Datasheet
NTE2388
Manufacturer Part Number
NTE2388
Description
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.18Ohm; ID 18A; TO-220; PD 125W; VGS +/-20V
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2388.pdf
(3 pages)
Specifications of NTE2388
Current, Drain
18 A
Gate Charge, Total
38 nC
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
0.18 Ohm
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
80 ns
Time, Turn-on Delay
30 ns
Transconductance, Forward
6 mhos
Transistor Type
N Channel Enhancement Mode
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.8 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D Low r
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I
Total Power Dissipation (T
Maximum Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During soldering, 1/8” from case for 5sec), T
Continuous
Peak
Derate Above 25 C
DS(on)
T
T
T
C
C
C
= +25 C
= +100 C
= +25 C
to Minimize On–Losses. Specified at Elevated Temperatures.
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
DSS
= 20k ), V
N–Channel Enhancement Mode,
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
DGR
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2388
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . .
–55 to +150 C
–55 to +150 C
62.5 C/W
+300 C
1W/ C
1 C/W
125W
200V
200V
20V
18A
72A
11A
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NTE2388 Summary of contents
Page 1
... N–Channel Enhancement Mode, Description: The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Low r to Minimize On– ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Drain–Source Breakdown Voltage Zero–Gate Voltage Drain Current Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse ON Characteristics (Note 1) Gate Threshold Voltage Static Drain–Source On Resistance On–State Drain Current Forward Transconductance Dynamic Characteristics Input ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...