S1G-E3/61T General Semiconductor / Vishay, S1G-E3/61T Datasheet - Page 3

• Manufacturer Part Number: S1G-E3/61T
• Description: RECTIFIER, 1A, 400V, SM
• Manufacturer: General Semiconductor / Vishay

Specifications of S1G-E3/61T

• Capacitance, Junction: 12 pF
• Current, Forward: 1 A
• Current, Reverse: 50 μA
• Current, Surge: 40 A
• Package Type: DO-214AC (SMA)
• Primary Type: Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 1.8 μs
• Voltage, Forward: 1.1 V
• Voltage, Reverse: 400 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V
20
0.8
T
0.065 (1.65)
0.049 (1.25)
0.060 (1.52)
0.030 (0.76)
J
0.090 (2.29)
0.078 (1.98)
= 125 °C
40
T
1.2
T
J
J
T
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
= 25 °C
J
= 75 °C
60
DO-214AC (SMA)
1.6
80
0.177 (4.50)
0.157 (3.99)
0.208 (5.28)
0.194 (4.93)
Cathode Band
)
0.008 (0.203)
0 (0)
100
2.0
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
1000
0.066 (1.68)
100
100
0.060 (1.52)
10
10
MIN.
1
1
0.01
0.01
MIN.
Figure 6. Typical Transient Thermal Impedance
Mounting Pad Layout
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.1
0.1
(5.28) REF.
t - Pulse Duration (s)
Reverse Voltage (V)
0.208
S1(K, M)
Units Mounted on
0.20 x 0.20" (5.0 x 5.0 mm)
x 0.5 mil. Inches (0.013 mm)
Thick Copper Land Areas
1
1
0.074 (1.88)
MAX.
S1A thru S1M
T
f = 1.0 MHz
V
S1(A - J)
J
sig
= 25 °C
10
10
= 50 mVp-p
100
100
3