SI7810DN-T1-E3 Siliconix / Vishay, SI7810DN-T1-E3 Datasheet
SI7810DN-T1-E3
Manufacturer Part Number
SI7810DN-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.052Ohm; ID 3.4A; PowerPAK 1212-8; PD 1.5W
Manufacturer
Siliconix / Vishay
Datasheet
1.SI7810DN-T1-E3.pdf
(2 pages)
Specifications of SI7810DN-T1-E3
Current, Drain
3.4 A
Gate Charge, Total
13.5 nC
Package Type
PowerPAK 1212-8
Polarization
N-Channel
Power Dissipation
1.5 W
Resistance, Drain To Source On
0.052 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
12 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
0.78 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7810DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy (Duty Cycle 1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
100
(V)
8
3.30 mm
D
7
D
0.062 at V
0.084 at V
http://www.vishay.com/ppg?73257
6
D
Si7810DN-T1-E3 (Lead (Pb)-free)
Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
PowerPAK 1212-8
DS(on)
Bottom View
5
D
J
a
b,c
GS
= 150 °C)
GS
a
(Ω)
= 10 V
= 6 V
1
N-Channel 100-V (D-S) MOSFET
S
2
a
S
3
S
3.30 mm
a
4
G
Steady State
Steady State
I
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
D
T
T
L = 0.1 mH
T
T
A
5.4
4.6
A
A
A
A
t ≤ 10 s
(A)
= 25 °C, unless otherwise noted
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
thJA
thJC
AS
FEATURES
APPLICATIONS
DS
GS
AS
D
S
• Halogen-free Option Available
• TrenchFET
• New Low Thermal Resistance
• PowerPAK
• PWM Optimized
• Primary Side Switch
• In-Rush Current Limiter
D
stg
1.07 mm Profile
Typical
®
®
G
10 s
5.4
4.3
3.2
3.8
2.0
1.9
26
65
1212-8 Package with Low
Power MOSFET
N-Channel MOSFET
– 55 to 150
± 20
100
260
20
19
18
D
S
Steady State
Maximum
3.4
2.8
1.3
1.5
0.8
2.4
33
81
Vishay Siliconix
Si7810DN
°C/W
Unit
Unit
mJ
°C
W
V
A
A
RoHS
COMPLIANT
1
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SI7810DN-T1-E3 Summary of contents
Page 1
... Bottom View Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free) Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy (Duty Cycle 1 %) ...
Page 2
... Si7810DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...