SI7461DP-T1-E3 Siliconix / Vishay, SI7461DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7461DP-T1-E3
• Description: P-CHANNEL 60-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI7461DP-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si7461DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
0.1
- 0.2
- 0.4
2
1
0.8
0.6
0.4
0.2
0.0
10 -
- 50
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
- 25
0
10 -
Threshold Voltage
T
I
D
J
3
= 250 µA
- T emperature ( °C)
2 5
Normalized Thermal Transient Impedance, Junction-to-Ambient
5 0
Limited by R
0.01
100
0.1
10
7 5
1
0.1
10 -
2
DS(on)
Limited
100
I
D(on)
Single Pulse
T
A
V
125
= 25 °C
DS
Square Wave Pulse Duration (s)
Safe Operating Area
- Drain-to-Source Voltage (V)
150
1
10 -
1
BVDSS Limited
10
1
100
80
60
40
20
0
0.01
I
DM
Single Pulse Power, Junction-to-Ambient
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
-
T
t
A
1
= P
Time (s)
t
2
DM
S09-0227-Rev. F, 09-Feb-09
1
Z
thJA
Document Number: 72567
thJA
100
t
t
1
2
(t)
= 52 °C/W
10
600
100