1N5822-E3\1 Vishay / Small Signal & Opto Products (SSP), 1N5822-E3\1 Datasheet

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1N5822-E3\1

Manufacturer Part Number
1N5822-E3\1
Description
Rectifier; DO-201 AD; 3.0 A (Avg.) @ 95 degC; 0.525 V (Max.); 40 V (Max.); 80 A
Manufacturer
Vishay / Small Signal & Opto Products (SSP)
Datasheet

Specifications of 1N5822-E3\1

Current, Forward
3 A
Current, Reverse
10 mA
Current, Surge
25 A
Package Type
DO-201AD
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-65 to +125 °C
Voltage, Forward
0.525 V
Voltage, Reverse
40 V
Lead Free Status / Rohs Status
RoHS Compliant part
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Non-repetitive peak reverse voltage
Maximum average forward rectified current 0.375" (9.5 mm) lead
length at T
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Storage temperature range
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
Maximum instantaneous forward voltage
Maximum average reverse current at rated
DC blocking voltage
L
T
V
I
= 95 °C
J
I
F(AV)
FSM
RRM
V
max.
F
(1)
DO-201AD
A
0.475 V, 0.500 V, 0.525 V
= 25 °C unless otherwise noted)
(1)
(1)
20 V, 30 V, 40 V
Schottky Barrier Rectifier
TEST CONDITIONS
125 °C
3.0
9.4
T
T
3.0 A
80 A
A
A
= 25 °C
= 100 °C
A
= 25 °C unless otherwise noted)
SYMBOL
SYMBOL
T
J
V
V
V
I
I
V
F(AV)
, T
FSM
RRM
RMS
RSM
V
V
I
DC
R
FEATURES
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
protection applications.
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes the cathode end
F
F
STG
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1N5820
1N5820
0.475
0.850
Vishay General Semiconductor
20
14
20
24
dc-to-dc
- 65 to + 125
1N5820 thru 1N5822
1N5821
1N5821
0.500
0.900
3.0
2.0
30
21
30
36
80
20
converters,
1N5822
1N5822
0.525
0.950
40
28
40
48
and
UNIT
UNIT
polarity
mA
°C
V
V
V
V
A
A
V
V
155

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1N5822-E3\1 Summary of contents

Page 1

... V RMS RSM I F(AV) I FSM STG = 25 °C unless otherwise noted) A TEST CONDITIONS SYMBOL (1) 3 (1) 9 ° 100 °C A 1N5820 thru 1N5822 Vishay General Semiconductor dc-to-dc converters, and 1N5820 1N5821 1N5822 3 125 1N5820 1N5821 1N5822 0.475 0.500 0.525 0.850 0.900 0.950 2.0 20 polarity ...

Page 2

... Vishay General Semiconductor THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7 mm) lead length with 2.5 x 2.5" (63.5 x 63.5 mm) copper pad ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) 1N5820-E3/54 1.08 1N5820-E3/73 1 ...

Page 3

... DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. 1N5820 thru 1N5822 Vishay General Semiconductor Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance 100 157 ...

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