1N4004-E3/54 General Semiconductor / Vishay, 1N4004-E3/54 Datasheet - Page 3

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1N4004-E3/54

Manufacturer Part Number
1N4004-E3/54
Description
1A, 400V, STD, SILASTIC RECT.
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of 1N4004-E3/54

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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Document Number: 88503
Revision: 26-Mar-08
1000
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
50
45
40
35
30
25
20
15
10
10
10
1
1
0.6
25
0
square waveform
Figure 5. Typical Reverse Characteristics
T
Pulse Width = 300 µs
1 % Duty Cycle
J
Percentage of Peak Reverse Voltage (%)
= 25 °C
t
p
0.8
Instantaneous Forward Voltage (V)
20
50
Ambient Temperature (°C)
t
t
t
1.0
p
p
p
= 1 ms
= 2 ms
= 5 ms
T
T
T
J
J
J
40
= 150 °C
= 100 °C
= 25 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
1.2
For technical questions within your region, please contact one of the following:
75
60
1.4
100
80
1.6
125
100
1.8
100
100
0.1
10
10
1
1
0.01
0.1
Figure 7. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 6. Typical Junction Capacitance
0.1
1N4001 thru 1N4007
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3

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