V30100S-E3/4W General Semiconductor / Vishay, V30100S-E3/4W Datasheet
V30100S-E3/4W
Manufacturer Part Number
V30100S-E3/4W
Description
RECTIFIER; TO-220AB; 100V; 30A; TRENCH MOS THROUGH HOLE TRENCH SCHOTTKY
Manufacturer
General Semiconductor / Vishay
Datasheet
1.VF30100S-E34W.pdf
(3 pages)
Specifications of V30100S-E3/4W
Current, Forward
30 A
Current, Reverse
23 mA
Current, Surge
250 A
Package Type
TO-220AB
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
2 °C/W
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-40 to +150 °C
Voltage, Forward
0.69 V
Voltage, Reverse
100 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
V30100S-E3/4W
Manufacturer:
ST
Quantity:
5 000
Part Number:
V30100S-E3/4W
Manufacturer:
VISHYA
Quantity:
20 000
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
Operating junction and storage temperature range
PIN 1
PIN 3
NC
A
K
V
TO-220AB
TO-263AB
V30100S
VB30100S
F
at I
T
V
I
J
I
F(AV)
FSM
High-Voltage Trench MOS Barrier Schottky Rectifier
RRM
F
max.
= 30 A
HEATSINK
NC
CASE
K
PIN 2
A
1
2
TMBS
3
A
®
= 25 °C unless otherwise noted)
K
PIN 1
PIN 3
PIN 1
PIN 3
TO-262AA
ITO-220AB
VF30100S
VI30100S
Ultra Low V
150 °C
0.69 V
100 V
250 A
30 A
V30100S, VF30100S, VB30100S & VI30100S
PIN 2
PIN 2
K
1
1
2
2
SYMBOL
T
3
3
J
V
F
I
I
F(AV)
V
, T
FSM
RRM
AC
= 0.39 V at I
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
V30100S
• Trench MOS Schottky technology
• Low forward voltage drop, low power
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB,
• Component in accordance to RoHS 2002/95/EC
losses
peak of 245 °C (for TO-263AB package)
and TO-262AA package)
and WEEE 2002/96/EC
F
TO-220AB,
= 5 A
Vishay General Semiconductor
VF30100S
- 40 to + 150
1500
100
250
30
ITO-220AB,
VB30100S
VI30100S
TO-263AB
UNIT
°C
V
A
A
V
and
1
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V30100S-E3/4W Summary of contents
Page 1
... Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Isolation voltage (ITO-220AB only) From terminal to heatsink min Operating junction and storage temperature range V30100S, VF30100S, VB30100S & VI30100S Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...
Page 2
... V30100S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage (1) Instantaneous forward voltage (2) Reverse current V R Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER SYMBOL Typical thermal resistance ORDERING INFORMATION (Example) ...
Page 3
... V30100S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...