Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for general–purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: h
D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE253 (NPN) & NTE254 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
A
= 2000 (Typ) @ I
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
(BR)CEO
A
I
I
I
CEO
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
D
I
V
V
V
V
C
J
thJC
CE
CE
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 50mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V, I
= 80V, I
= 80V, I
= 80V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
= 2A
C
B
B
E
E
= 0
= 0, Note 1
= 0
= 0
= 0, T
C
= +100 C
Min
80
–
–
–
–
Typ
–
–
–
–
–
–65 to +150 C
–65 to +150 C
Max
100
100
500
2.0
–
0.32W/ C
3.23 C/W
100mA
Unit
mA
V
40W
A
A
A
80V
80V
5V
4A