IRFBC40APBF Vishay PCS, IRFBC40APBF Datasheet
IRFBC40APBF
Manufacturer Part Number
IRFBC40APBF
Description
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2 Ohms; ID 6.2A; TO-220AB; PD 125W; VGS +/-30
Manufacturer
Vishay PCS
Datasheet
1.IRFBC40APBF.pdf
(3 pages)
Specifications of IRFBC40APBF
Current, Drain
6.2 A
Gate Charge, Total
42 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
1.2 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
31 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
3.4 S
Voltage, Breakdown, Drain To Source
600 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBC40APBF
Manufacturer:
M/A-COM
Quantity:
5 000
Part Number:
IRFBC40APBF
Manufacturer:
IR墨西哥
Quantity:
20 000
l
l
l
l
l
l
l
l
l
I
I
I
P
V
dv/dt
T
T
D
D
DM
GS
STG
D
J
@ T
@ T
Avalanche Voltage and Current
Drive Requirement
dv/dt Ruggedness
@T
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Effective Coss Specified ( See AN 1001)
Single Transistor Forward
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
600V
DSS
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
Rds(on) max
TO-220AB
Max.
125
± 30
6.2
3.9
1.0
6.0
25
1.2Ω
®
Power MOSFET
G
D
S
Units
W/°C
6.2A
V/ns
°C
W
I
A
V
D
1
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IRFBC40APBF Summary of contents
Page 1
Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free l Low Gate Charge Qg results in Simple l Drive Requirement Improved Gate, Avalanche and Dynamic l dv/dt Ruggedness Fully Characterized Capacitance ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION ...