IRFPS37N50APBF Vishay PCS, IRFPS37N50APBF Datasheet
IRFPS37N50APBF
Manufacturer Part Number
IRFPS37N50APBF
Description
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 0.2Ohm; ID 23A; TO-247AC; PD 280W; VGS +/-20V
Manufacturer
Vishay PCS
Datasheet
1.IRFPS37N50APBF.pdf
(2 pages)
Specifications of IRFPS37N50APBF
Current, Drain
23 A
Gate Charge, Total
210 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
280 W
Resistance, Drain To Source On
0.2 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
100 ns
Time, Turn-on Delay
18 ns
Transconductance, Forward
14 S
Voltage, Breakdown, Drain To Source
400 V
Voltage, Forward, Diode
1.8 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFPS37N50APBF
Manufacturer:
OKI
Quantity:
827
Company:
Part Number:
IRFPS37N50APBF
Manufacturer:
Vishay/Siliconix
Quantity:
1 818
Part Number:
IRFPS37N50APBF
Manufacturer:
IR国际整流器
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 36 A, dI/dt ≤ 145 A/µs, V
(Max.) (Ω)
SUPER-247
J
= 25 °C, L = 1.94 mH, R
a
TM
G
D
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
DS
G
= 25 Ω, I
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
180
46
71
AS
D
S
= 36 A (see fig. 12).
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.13
GS
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
SUPER-247
IRFPS37N50APbF
SiHFPS37N50A-E3
IRFPS37N50A
SiHFPS37N50A
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge Converters
• Power Factor Correction Boost
IRFPS37N50A, SiHFPS37N50A
Requirement
Ruggedness
and Current
TM
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
Specified
g
Results in Simple Drive
- 55 to + 150
LIMIT
1260
300
± 30
500
144
446
3.6
3.5
36
23
36
44
d
Vishay Siliconix
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1
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IRFPS37N50APBF Summary of contents
Page 1
... Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES N-Channel MOSFET • Full Bridge Converters • Power Factor Correction Boost SUPER-247 IRFPS37N50APbF SiHFPS37N50A-E3 IRFPS37N50A SiHFPS37N50A = 25 °C, unless otherwise noted ° ...
Page 2
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain ...