BAS40-05-V-GS08 Vishay / Small Signal & Opto Products (SSP), BAS40-05-V-GS08 Datasheet - Page 2

• Manufacturer Part Number: BAS40-05-V-GS08
• Description: Diode; Schottky, 40V, 200mA, Common Cathode, SOT23
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of BAS40-05-V-GS08

• Capacitance: 4 Pf
• Current, Forward, Continuous: 200 mA
• Current, Surge: 600 mA
• Package Type: SOT-23
• Power Dissipation: 200 mW
• Temperature, Junction, Maximum: +125 °C
• Thermal Resistance, Junction To Ambient: 500 K/W
• Time, Reverse Recovery: 5 ns
• Voltage, Breakdown: 40 V
• Voltage, Forward: 380 mV
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

BAS40-00-V to BAS40-06-V
Vishay Semiconductors
Thermal Characteristics
T
1)
Electrical Characteristics
T
Layout for R
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
amb
amb
Device on fiberglass substrate, see layout on next page.
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
thJA
Parameter
test
I
Pulse test V
Pulse test t
I
Pulse test t
I
V
I
R
15 (0.59)
R
F
F
F
R
L
= 1.0 mA
= 40 mA
= I
= 10 μA (pulsed)
= 100 Ω
= 0 V, f = 1 MHz
R
= 10 mA, i
12 (0.47)
Test condition
p
p
R
< 300 µs,
< 300 µs,
= 30 V, t
0.8 (0.03)
5 (0.2)
R
= 1 mA,
p
< 300 µs
Test condition
1.5 (0.06)
7.5 (0.3)
5.1 (0.2)
3 (0.12)
1 (0.4)
Symbol
V
C
V
V
(BR)
I
t
R
rr
D
F
F
2 (0.8)
2 (0.8)
Symbol
Min
R
40
T
thJA
T
stg
17451
j
1 (0.4)
Typ.
4.0
20
- 65 to + 125
Value
500
125
1)
Document Number 85701
1000
Max
100
380
5
5
Rev. 1.7, 27-Sep-06
K/W
Unit
°C
°C
Unit
mV
mV
nA
pF
ns
V