SUP90P06-09L-E3 Siliconix / Vishay, SUP90P06-09L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUP90P06-09L-E3
• Description: P-CHANNEL 60-V (D-S) 175C MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SUP90P06-09L-E3

• Channel Type: P
• Current, Drain: –90 A
• Fall Time: 450 ns
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 250 W
• Resistance, Thermal, Junction To Case: 0.6 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 62 °C/W
• Time, Rise: 285 ns
• Time, Turn-off Delay: 210 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 20 S
• Voltage, Breakdown, Drain To Source: –60 V
• Voltage, Diode Forward: –1.5 V
• Voltage, Drain To Source: –60 V
• Voltage, Forward, Diode: –1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Document Number: 73010
S-41203—Rev. A, 21-Jun-04
THERMAL RATINGS
200
150
100
0.01
50
0
0.1
2
1
0
10
−4
0.2
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
by Package
25
Single Pulse
Limited
0.02
T
0.05
vs. Case Temperature
50
C
− Case Temperature (_C)
0.1
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
10
−3
125
150
Square Wave Pulse Duration (sec)
175
New Product
10
−2
1000
100
0.1
10
1
0.1
Limited by r
V
DS
Single Pulse
DS(on)
T
Safe Operating Area
− Drain-to-Source Voltage (V)
C
1
= 25_C
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
10
JM
−1
− T
t
A
1
SUP90P06-09L
= P
Vishay Siliconix
t
2
DM
10
Z
thJA
thJA
t
t
1
2
(t)
= 62.5_C/W
www.vishay.com
100
10 ms
100 ms
1 ms
10 ms
100 ms, dc
1
5