NTE2354 NTE Electronics, Inc., NTE2354 Datasheet
NTE2354
Manufacturer Part Number
NTE2354
Description
Transistor; PNP; 800 V; 1500 V; 6 V; 10 A; 1.0 mA (Max.); 8; 5 V (Max.)
Manufacturer
NTE Electronics, Inc.
Type
High Voltager
Datasheet
1.NTE2354.pdf
(2 pages)
Specifications of NTE2354
Current, Collector
10 A
Current, Collector Cutoff
1.0 mA (Max.)
Current, Gain
8
Gain, Dc Current, Minimum
8
Package Type
TO-3P
Polarity
NPN
Power Dissipation
150 W
Primary Type
Si
Transistor Type
PNP
Voltage, Breakdown, Collector To Emitter
800 V
Voltage, Collector To Base
1500 V
Voltage, Collector To Emitter
800 V
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Emitter To Base
6 V
Voltage, Saturation, Collector To Emitter
5 V (Max.)
Lead Free Status / Rohs Status
RoHS Compliant part
Applications:
D High–definition color display horizontal deflection output
Features:
D Fast speed: t
D High breakdown voltage: V
D High reliability
Absolute Maximum Ratings: (T
Collector–to–Base Voltage, V
Collector–to–Emitter Voltage, V
Emitter–to–Base Voltage, V
Collector Current, I
Peak Collector Current, i
Collector Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Saturation Voltage
Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Collector–to–Emitter
Base–to–Emitter
Parameter
High Voltage Horizontal Output for High Definition CRT
f
= 100ns Typ
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
J
cp
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
V
Symbol
V
V
CBO
stg
A
CEO(sus)
CEO
CE(sat)
I
BE(sat)
I
h
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CES
EBO
t
stg
A
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
f
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1500V
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
I
V
I
I
V
I
I
C
C
C
C
C
CE
EB
CE
NTE2354
= 100mA, I
= 8A, I
= 8A, I
= 6A, I
= 6A, I
= 4V, I
= 1500V, R
= 5V, I
Test Conditions
B
B
B1
B1
C
= 2.0A
= 2.0A
C
= 1.2A, I
= 1.2A, I
= 0
= 1.0A
B
= 0
BE
= 0
B2
B2
= –2.4A
= –2.4A
Min Typ Max Unit
800
–
–
–
–
8
–
–
0.1
–
–
–
–
–
–
–
–55 to +150 C
1.0
1.0
5.0
1.5
3.0
0.2
–
–
+150 C
1500V
150W
800V
mA
mA
V
V
V
–
10A
25A
s
s
6V
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NTE2354 Summary of contents
Page 1
... Emitter Cutoff Current Saturation Voltage Collector–to–Emitter Saturation Voltage Base–to–Emitter DC Current Gain Storage Time Fall Time NTE2354 Silicon NPN Transistor = 1500V CBO = +25 C unless otherwise specified CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
C .591 (15.02) .787 (20. .126 (3.22) Dia E .215 (5.47) ...