NTE5408 NTE Electronics, Inc., NTE5408 Datasheet
NTE5408
Manufacturer Part Number
NTE5408
Description
SCR; TO-5; 200 V; 40; 4 A; 2.2 V; 5 degC/W; 1 Apeak @ 3 uS (Max.); -40 degC; 1
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5408.pdf
(2 pages)
Specifications of NTE5408
Current Squared Time Rating
2.6
Current, Forward
4 A
Current, Gate Trigger
1 Apeak @ 3 uS (Max.)
Current, On-state, Rms, Maximum
4 A
Current, Reverse
0.75 mA
Current, Surge
40 A
Current, Surge, Peak
40
Package Type
TO-5
Power Dissipation
20 W
Primary Type
SCR
Resistance, Thermal, Junction To Case
+5 °C/W
Temperature, Junction, Maximum
+100 °C
Temperature, Operating
-40 to +100 °C
Temperature, Operating, Maximum
100 °C
Temperature, Operating, Minimum
-40 °C
Voltage, Drop, On-state, Maximum
2.2 V
Voltage, Forward
2.2 V
Voltage, Gate, Maximum
0.8 V (Trigger)
Voltage, Reverse
200 V
Voltage, Reverse, Peak, Maximum
200 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and
MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermeti-
cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
a gate current of 200 A.
These NTE SCRs are reverse–blocking triode thyristors and may be switched from off–state to con-
duction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
Repetitive Peak Off–State Voltage (T
RMS On–State Current (T
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I
Peak Gate–Trigger Current (3 s Max), I
Peak Gate–Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
NTE5408
NTE5409
NTE5410
NTE5408
NTE5409
NTE5410
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
C
= +75 C, Conduction Angle of 180 ), I
stg
GT
NTE5408 thru NTE5410
opr
3 Amp Sensitive Gate
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
C
C
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GTM
= +100 C), V
= +100 C), V
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3 s Max), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
RRM
DRXM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
. . . . . . . . . . . . . . . . . . .
TSM
. . . . . . . . . . .
–40 to +100 C
–40 to +150 C
+5 C/W
200mW
200V
400V
600V
200V
400V
600V
20W
40A
4A
1A
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NTE5408 Summary of contents
Page 1
... Silicon Controlled Rectifier (SCR) Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermeti- cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with a gate current of 200 A. These NTE SCRs are reverse– ...
Page 2
Electrical Characteristics: (T Parameter Peak Off–State Current Maximum On–State Voltage DC Holding Current DC Gate–Trigger Current DC Gate–Trigger Voltage Gate Controlled Turn–On Time for Fusing Reference Critical Rate of Applied Forward Voltage = +25 C unless otherwise ...