SUD50N06-08H-E3 Siliconix / Vishay, SUD50N06-08H-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N06-08H-E3
• Description: MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.0065Ohm; ID 93A; TO-252; PD 136W; VGS +/-20V
• Manufacturer: Siliconix / Vishay

Specifications of SUD50N06-08H-E3

• Application: Automotive such as high-side switch, motor drives, 12 V battery
• Channel Type: N-Channel
• Current, Drain: 93 A
• Fall Time: 10 nS
• Gate Charge, Total: 94 nC
• Mounting And Package Type: Surface Mount and TO-252
• Operating And Storage Temperature: -55 to +175 °C
• Package Type: TO-252
• Polarization: N-Channel
• Power Dissipation: 136 W
• Resistance, Drain To Source On: 0.0065 Ohm
• Resistance, Thermal, Junction To Case: 0.85 °C⁄W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 15 °C⁄W
• Time, Rise: 13 nS
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 28 ns
• Transconductance, Forward: 25 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Document Number: 73160
S-42243—Rev. A, 13-Dec-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
9000
8000
7000
6000
5000
4000
3000
2000
1000
100
150
125
100
80
60
40
20
75
50
25
0
0
0
0
0
0
T
10
10
C
C
rss
2
V
V
= −55_C
DS
DS
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
I
Transconductance
20
D
20
− Drain Current (A)
Capacitance
4
V
GS
C
30
30
oss
C
= 10 thru 6 V
iss
6
40
40
5 V
8
125_C
50
50
25_C
10
60
60
New Product
0.015
0.012
0.009
0.006
0.003
0.000
100
80
60
40
20
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 50 A
On-Resistance vs. Drain Current
1
= 30 V
20
40
V
GS
Q
Transfer Characteristics
g
− Gate-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
2
− Drain Current (A)
Gate Charge
40
80
SUD50N06-08H
V
Vishay Siliconix
GS
3
T
C
= 10 V
120
= 125_C
60
25_C
4
160
80
www.vishay.com
5
−55_C
100
200
6
3