NTE3323 NTE Electronics, Inc., NTE3323 Datasheet - Page 2

• Manufacturer Part Number: NTE3323
• Description: IGBT; N-Channel; 1200 V; 25 ADC, 50 A @ 1 ms; + 20 V
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE3323

• Capacitance, Gate: 3200 pF
• Current, Collector: 25 A
• Input Capacitance: 3200 pF (Typ.)
• Polarity: N-Channel
• Power Dissipation: 200 W
• Temperature, Operating, Maximum: +150 °C
• Time, Turn-off: 0.80 μs (Typ.)
• Time, Turn-on: 0.40 μs (Typ.)
• Transistor Type: N-Channel
• Voltage, Collector To Emitter: 1200 V
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Gate To Emitter: ± 20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

C
G
E
.810(20.57)
.204 (5.2)
Max
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
.787
(2.5)
(20.0)
.215 (5.45)
.040 (1.0)
.023
(0.6)
G
C
E
Note: Collector connected to heat sink.