NTE2374 NTE Electronics, Inc., NTE2374 Datasheet
NTE2374
Manufacturer Part Number
NTE2374
Description
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.18Ohm; ID 18A; PD 125W; VGS +/-20V; gFS 6.7Mh
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2374.pdf
(3 pages)
Specifications of NTE2374
Application
For high speed switch
Channel Type
N-Channel
Current, Drain
18 A
Fall Time
36 ns (Typ.)
Gate Charge, Total
70 nC
Operating And Storage Temperature
-55 to 150 °C
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
0.18 Ohm
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
51 ns (Typ.)
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
6.7 Mhos
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
2 V
Voltage, Gate To Source
±20 V
Features:
D Dynamic dv/dt Rating
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
Pulsed Drain Current (Note 1), I
Power Dissipation (T
Gate–to–Source Voltage, V
Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6–32 or M3 Screw)
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I
Note 4. Pules Width
T
T
Derate Linearly Above 25 C
C
C
SD
= +25 C
= +100 C
DD
= 50V, starting T
18A, di/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25 C), P
300 s, Duty Cycle
150A/ s, V
GS
GS
AR
J
N–Ch, Enhancement Mode
stg
= +25 C, L = 2.7mH, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
AR
J
thJC
V
NTE2374
MOSFET
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)DSS
2%.
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
J
G
= 25 , I
+150 C
AS
= 18A
L
thCS
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
10 lbfin (1.1Nm)
–55 to +150 C
–55 to +150 C
1.0W/ C
1.0 C/W
0.5 C/W
62 C/W
5.0V/ns
+300 C
580mJ
125W
13mJ
18A
72A
20V
18A
11A
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NTE2374 Summary of contents
Page 1
... Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 50V, starting T DD Note 3. I 18A, di/dt 150A Note 4. Pules Width 300 s, Duty Cycle NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch = 10V ...
Page 2
Electrical Characteristics: (T Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Gate–to–Source Forward Leakage Gate–to–Source Reverse Leakage Total Gate Charge Gate–to–Source Charge Gate–to–Drain (“Miller”) Charge Turn–On Delay Time Rise ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...