NTE399 NTE Electronics, Inc., NTE399 Datasheet
NTE399
Manufacturer Part Number
NTE399
Description
Transistor, NPN; TO-92; NPN; 300 V; 300 V; 6 V; 100 mA; 900 mW; 0 to 150 degC
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Amplifierr
Datasheet
1.NTE399.pdf
(2 pages)
Specifications of NTE399
Current, Collector
100 mA
Current, Gain
220
Device Dissipation
900 mW
Frequency
50 MHz
Gain, Dc Current, Maximum
220
Gain, Dc Current, Minimum
100
Package Type
Giant TO-92
Polarity
NPN
Power Dissipation
900 mW
Primary Type
Si
Temperature, Junction, Operating
0 to 150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
300 V
Voltage, Collector To Base
300 V
Voltage, Collector To Emitter
300 V
Voltage, Collector To Emitter, Saturation
0.6 V
Voltage, Emitter To Base
6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Continuous
Peak
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Voltage Video Amp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
= +25 C unless otherwise specified)
(Compl to NTE2366)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
Symbol
V
V
CE(sat)
I
I
BE(sat)
h
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
EBO
f
FE
T
ob
NTE399
V
V
V
V
V
I
I
C
C
CB
EB
CE
CB
CB
= 20mA, I
= 20mA, I
= 200V, I
= 6V, I
= 10V, I
= 30V, I
= 10V, f = 1MHz
Test Conditions
C
C
C
B
B
= 0
E
= 5mA
= 10mA
= 2mA
= 2mA
= 0
Min
100
50
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–55 to +150 C
Max
220
1.0
1.0
7.5
0.6
1.0
–
900mW
+150 C
100mA
300mA
MHz
300V
300V
Unit
pF
V
V
A
A
6V
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NTE399 Summary of contents
Page 1
... Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain–Bandwidth Product Output Capacitance Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage NTE399 Silicon NPN Transistor High Voltage Video Amp (Compl to NTE2366 CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .512 (13.0) Min .100 (2.54) .240 (6.09) Max Seating Plane .026 (.66) Dia Max .200 (5.08) Max ...