VTE1285H Excelitas Technologies Sensors, VTE1285H Datasheet

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VTE1285H

Manufacturer Part Number
VTE1285H
Description
EMITTER, IR, 100 MA, 1.5 VOLT, 880NM
Manufacturer
Excelitas Technologies Sensors
Datasheet

Specifications of VTE1285H

Lead Free Status / Rohs Status
RoHS Compliant part
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
DESCRIPTION
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.
ABSOLUTE MAXIMUM RATINGS @ 25°C
Maximum Temperatures
Continuous Power Dissipation:
Maximum Continuous Current:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Bullet Package — 880 nm
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7
Refer to General Product Notes, page 2.
Part Number
VTE1285H
Storage and Operating:
Derate above 30°C:
Derate above 30°C:
RoHS Compliant
Min.
3.0
mW/cm
E
e
2
Typ.
5.5
Irradiance
distance
mm
36
PACKAGE DIMENSIONS
Condition
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
2.5 A
-.8%/°C
Diameter
Output
mm
6.4
(unless otherwise noted)
Intensity
Radiant
mW/sr
Min.
117
39
I
e
(See also GaAlAs curves, pages 108-110)
Maximum Reverse Voltage:
Maximum Reverse Current @ V
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
Lead Soldering Temperature:
Phone: 877-734-6786 Fax: 450-424-3413
Total Power
Rise: 1.0 µs Fall: 1.0 µs
(1.6 mm from case, 5 seconds max.)
mW
Typ.
CASE 62 T-1¾ (5 mm) BULLET
P
20
O
CHIP SIZE: .015" x .015"
inch (mm)
(Pulsed)
Current
F
Test
= 20 mA
100
mA
I
FT
VTE1285H
R
= 5V:
Typ.
1.5
Forward Drop
@ I
Volts
V
F
FT
www.perkinelmer.com/opto
Max.
2.0
5.0V
10 µA
880 nm
23 pF
260°C
Half Power Beam
Angle
Typ.
±8°
1/2

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