NTE103 NTE Electronics, Inc., NTE103 Datasheet
NTE103
Manufacturer Part Number
NTE103
Description
Transistor NPN, Ge, Power Output Driver, TO5
Manufacturer
NTE Electronics, Inc.
Type
Driver, Powerr
Datasheet
1.NTE102.pdf
(2 pages)
Specifications of NTE103
Current, Collector
150 mA
Current, Emitter
100 mA
Current, Gain
90
Frequency
25 MHz
Package Type
TO-5
Polarity
NPN
Power Dissipation
150 mW
Primary Type
Ge
Voltage, Breakdown, Collector To Emitter
25 V
Voltage, Collector To Base
25 V
Voltage, Collector To Emitter
24 V
Voltage, Collector To Emitter, Saturation
0.09 V
Voltage, Emitter To Base
12 V
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me-
dium–speed saturated switching applications.
Features:
D Low Collector–Emitter Saturation Voltage:
D High Emitter–Base Breakdown Voltage:
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Emitter Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Junction Temperature Range, T
Electrical Characteristics: (T
Note 1. V
OFF Characteristics
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Punch–Through Voltage
Collector Cutoff Current
Emitter Cutoff Current
V
V
Derate Above +25
Derate Above +25
CE(sat)
(BR)EBO
with 11M minimum input impedance. The Collector–Base Voltage, V
V
PT
EBfl
Parameter
is determined by measuring the Emitter–Base floating potential V
= 1V; this value of V
= 200mV Max @ I
= 12V Min @ I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Germanium Complementary Transistors
EBO
CBO
A
C
NTE102 (PNP) & NTE103 (NPN)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CES
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 20 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Output, Driver
V
V
CB
= 24mA
Symbol
(BR)CBO
(BR)EBO
I
I
V
CBO
EBO
PT
= (V
stg
D
D
J
PT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
E
EBfl
CB
CB
EB
+ 1).
= 20 A, I
= 20 A, I
= 2.5V, I
= 12V, I
= 12V, I
= 1V, Note 1
Test Conditions
E
C
E
E
C
= 0
= 0
= 0
= 0, T
= 0
A
= +80 C
Min
25
12
24
–
–
–
EBfl
CB
, using a voltmeter
, is increased until
Typ
0.8
0.5
20
–
–
–
–65 to +100 C
–65 to +100 C
Max
5.0
2.5
90
–
–
–
2mW/ C
4mW/ C
150mW
300mW
150mA
100mA
Unit
V
V
V
25V
24V
12V
A
A
A
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NTE103 Summary of contents
Page 1
... NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me- dium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage 200mV Max @ I CE(sat) D High Emitter–Base Breakdown Voltage 12V Min @ I ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage Small–Signal Characteristics Alpha Cutoff Frequency Output Capacitance Input Impedance Voltage Feedback Ratio Small–Signal Current Gain Output Admittance Switching Characteristics Delay Time Rise Time Storage Time ...