SI4966DY-T1-E3 Siliconix / Vishay, SI4966DY-T1-E3 Datasheet
SI4966DY-T1-E3
Manufacturer Part Number
SI4966DY-T1-E3
Description
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ohm; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
Manufacturer
Siliconix / Vishay
Datasheet
1.SI4966DY-T1-E3.pdf
(2 pages)
Specifications of SI4966DY-T1-E3
Current, Drain
±7.1 A
Gate Charge, Total
25 nC
Package Type
SO-8
Polarization
Dual N-Channel
Power Dissipation
2 W
Resistance, Drain To Source On
0.019 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
90 ns
Time, Turn-on Delay
40 ns
Transconductance, Forward
27 S
Voltage, Breakdown, Drain To Source
20 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±12 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4966DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Ordering Information: Si4966DY–T1
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
20
20
(V)
G
G
S
S
1
1
2
2
Si4966DY–T1–E3 (Lead (Pb)–free)
1
2
3
4
J
J
a
a
0.025 at V
0.035 at V
= 150 _C)
= 150 _C)
a
r
DS(on)
Top View
Dual N-Channel 2.5-V (G-S) MOSFET
SO-8
Parameter
Parameter
GS
GS
a
a
(W)
= 4.5 V
= 2.5 V
a
8
7
6
5
D
D
D
D
1
1
2
2
I
" 7.1
" 6.0
D
(A)
_
T
T
T
T
A
A
A
A
= 25 _C
= 70 _C
= 25 _C
= 70 _C
G
1
N-Channel MOSFET
Symbol
Symbol
D TrenchFETr Power MOSFET
D 2.5 V Rated
D 100 % Rg tested
T
R
J
V
V
I
D
S
P
P
, T
thJA
DM
I
I
I
GS
DS
D
D
S
1
1
D
D
stg
G
2
N-Channel MOSFET
– 55 to 150
Limit
Vishay Siliconix
Limit
" 7.1
" 5.7
" 12
" 40
D
S
62.5
1.7
1.3
20
2
2
2
Si4966DY
Unit
Unit
_C/W
_C
W
W
V
V
A
A
*
1
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SI4966DY-T1-E3 Summary of contents
Page 1
... Top View Ordering Information: Si4966DY–T1 Si4966DY–T1–E3 (Lead (Pb)–free) Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) = 150 _C Continuous Drain Current (T Continuous Drain Current ( Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...
Page 2
... Si4966DY Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...