1N5407-E3/54 General Semiconductor / Vishay, 1N5407-E3/54 Datasheet - Page 3

• Manufacturer Part Number: 1N5407-E3/54
• Description: 3A, 800V, SILASTIC RECT.
• Manufacturer: General Semiconductor / Vishay

Specifications of 1N5407-E3/54

• Current, Leakage, Reverse: 5 μA
• Current, Surge: 200 A
• Junction Capacitance: 30 pF
• Package Type: DO-201AD
• Primary Type: Transient Voltage Suppressors
• Temperature, Operating: –50 to +150 °C
• Thermal Resistance, Junction To Ambient: 20 °C/W
• Voltage, Forward: 1.2 V
• Voltage, Repetitive Peak Reverse: 800 V
• Voltage, Rms, Maximum: 560 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88516
Revision: 02-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
1.0
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T
T
T
1.2
J
J
J
60
= 150 °C
= 100 °C
= 25 °C
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.4
80
1.6
100
1.8
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
100
100
0.1
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.1
1N5400 thru 1N5408
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3