25AA256-I/P Microchip Technology Inc., 25AA256-I/P Datasheet - Page 2

• Manufacturer Part Number: 25AA256-I/P
• Description: 256K, 32K X 8 , 1.8V SER EE IND
• Manufacturer: Microchip Technology Inc.

Specifications of 25AA256-I/P

• Capacitance, Input: 7 pF
• Capacitance, Output: 7 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 2.5 mA (Read), 0.6 mA (Write)
• Current, Output, Leakage: ±1
• Data Retention: >200 yrs.
• Density: 256K
• Interface: SPI Bus
• Memory Type: Serial EEPROM
• Organization: 32768×8
• Package Type: PDIP
• Temperature, Operating: -40 to +85 °C
• Time, Access: 50 ns
• Time, Address Hold: 250
• Time, Address Setup: 150
• Time, Fall: 100 ns
• Time, Rise: 100 ns
• Voltage, Esd: >4 kV
• Voltage, Input, High: 2.8 V
• Voltage, Input, Low: 0.36 V
• Voltage, Output, High: 1.3 V
• Voltage, Supply: 1.8 to 5.5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

25AA256/25LC256
1.0
Absolute Maximum Ratings
V
All inputs and outputs w.r.t. V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
TABLE 1-1:
DS21822F-page 2
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Param.
D001
D002
D003
D004
D005
D006
D007
D008
D009
D010
D011
D012
Note 1:
CC
No.
.............................................................................................................................................................................6.5V
2:
ELECTRICAL CHARACTERISTICS
V
V
V
V
V
V
I
I
C
I
I
I
LI
LO
CC
CC
CCS
OL
OL
OH
IH
IL
IL
INT
This parameter is periodically sampled and not 100% tested.
Typical measurements taken at room temperature (25°C).
Sym.
Read
Write
DC CHARACTERISTICS
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
Operating Current
Standby Current
Characteristic
SS
......................................................................................................... -0.6V to V
(†)
Industrial (I):
Automotive (E): T
V
.7 V
CC
Min.
-0.3
-0.3
—
—
—
—
—
—
—
—
—
—
—
-0.5
CC
Typ.
0.15
2.5
0.5
0.6
0.1
—
—
—
—
—
—
—
—
—
(2)
T
A
A
0.3 V
0.2 V
V
= -40°C to +85°C
= -40°C to +125°C
Max.
CC
0.4
0.2
2.5
±1
±1
—
7
6
5
3
5
1
+1
CC
CC
Units
mA
mA
mA
mA
μA
μA
pF
μA
μA
V
V
V
V
V
V
V
V
I
I
I
CS = V
CS = V
T
V
V
SO = Open
V
SO = Open
V
V
CS = V
or V
CS = V
or V
OL
OL
OH
A
CC
CC
CC
CC
CC
CC
CC
= 25°C, F
= 2.1 mA, V
= 1.0 mA, V
= -400 μA
SS
SS
≥ 2.5V
< 2.5V
= 5.0V (Note 1)
= 5.5V; F
= 2.5V; F
= 5.5V
= 2.5V
, 125°C
, 85°C
© 2007 Microchip Technology Inc.
CC
CC
CC
CC
V
V
Test Conditions
, V
, V
CC
CC
= 5.5V, Inputs tied to V
= 5.5V, Inputs tied to V
OUT
IN
CLK
= 1.8V to 5.5V
= 2.5V to 5.5V
CLK
CLK
= V
CC
CC
= 1.0 MHz,
= V
= 10.0 MHz;
= 5.0 MHz;
SS OR
= 4.5V
= 2.5V
SS OR
V
CC
V
CC
CC
+1.0V
CC
CC