NTE2406 NTE Electronics, Inc., NTE2406 Datasheet
NTE2406
Manufacturer Part Number
NTE2406
Description
Transistor; SOT-23; NPN; 40 V; 75 V; 6 V; 600 mA; 225 mW; -55 to 150 degC; 40 V
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, General Purposer
Datasheet
1.NTE2406.pdf
(3 pages)
Specifications of NTE2406
Current, Collector
600 mA
Current, Collector Cutoff
10 μA @ 125 °C
Current, Continuous Collector
600 mA
Current, Gain
40
Device Dissipation
225 mW
Frequency
300 MHz
Gain, Dc Current, Maximum
300
Gain, Dc Current, Minimum
100
Package Type
SOT-23
Polarity
NPN
Power Dissipation
225 mW
Primary Type
Si
Temperature Range, Junction, Operating
-55 to 150 °C
Thermal Resistance, Junction To Ambient
417 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
75 V
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Breakdown, Emitter To Base
6 V
Voltage, Collector To Base
75 V
Voltage, Collector To Emitter
40 VDC
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
6 V
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (FR–5 Board, Note 1), P
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R
Total Device Dissipation (Alumina Substrate, Note 2), P
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (T
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
Derate above +25 C
Derate above +25 C
Parameter
General Purpose Amp, Surface Mount
EBO
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Compl to NTE2407)
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
= +25 C unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
I
I
I
CBO
CEX
EBO
I
BL
J
NTE2406
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
V
V
C
C
E
CB
CB
CE
EB
CE
= 10 A, I
= 10mA, I
= 10 A, I
= 60V, I
= 60V, I
= 60V, V
= 3V, I
= 60V, V
D
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
B
E
E
= 0
EB(off)
EB(off)
D
= 0
= 0
= 0
= 0
= 0, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3V
= 3V
A
= +125 C
thJA
. . . . . . . . . . . . . .
thJA
Min
75
40
6
–
–
–
–
–
. . . . . . . .
Typ
–
–
–
–
–
–
–
–
–55 to +150 C
–55 to +150 C
Max
0.01
10
10
10
20
1.8mW/ C
2.4mW/ C
–
–
–
556 C/W
417 C/W
225mW
300mW
600mA
Unit
nA
nA
nA
V
V
V
75V
40V
A
A
6V
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NTE2406 Summary of contents
Page 1
... Parameter OFF Characteristics Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current NTE2406 Silicon NPN Transistor (Compl to NTE2407) = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 3) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small–Signal Current Gain Output Admittance Collector–Base Time Constant ...
Page 3
.037 (0.95) .074 (1.9) .118 (3.0) Max .007 (0.2) .098 (2.5) Max .051 (1.3) .043 (1.1) ...