RS1G-E3/2GT General Semiconductor / Vishay, RS1G-E3/2GT Datasheet - Page 3

• Manufacturer Part Number: RS1G-E3/2GT
• Description: RECTIFIER; DO-214AC (SMA); 1A; 400V; 150NS; SMD; FAST
• Manufacturer: General Semiconductor / Vishay

Specifications of RS1G-E3/2GT

• Capacitance, Junction: 10 pF
• Current, Forward: 1 A
• Current, Reverse: 50 μA
• Current, Surge: 30 A
• Package Type: DO-214AC (SMA)
• Primary Type: Rectifier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 150 ns
• Voltage, Forward: 1.3 V
• Voltage, Reverse: 400 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
J
T
40
= 125 °C
J
1.0
= 125 °C
0.065 (1.65)
0.049 (1.25)
0.030 (0.76)
0.060 (1.52)
0.078 (1.98)
0.090 (2.29)
T
1.2
J
60
= 100 °C
Pulse Width = 300 µs
1 % Duty Cycle
T
J
1.4
= 25 °C
T
J
80
= 25 °C
DO-214AC (SMA)
1.6
0.194 (4.93)
0.157 (3.99)
0.208 (5.28)
0.177 (4.50)
Cathode Band
0.008 (0.203)
100
1.8
0 (0)
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
(1.68 MIN.)
0.066 MIN.
0.060 MIN.
(1.52 MIN.)
100
100
10
10
1
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
Mounted on 0.2 x 0.2" (5 x 5 mm)
Copper Pad Area
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
RS1J to RS1K
(5.28) REF
0.208
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
0.074 MAX.
(1.88 MAX.)
RS1A thru RS1K
10
RS1A to RS1G
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
100
10
3